Fabrication Of ZnO Nan Arrays And Effects Of H~+Owiredoping

ZnO nanowire arrays has a large surface area, excellent optical properties andelectron transport properties, which results in a great potential in the improvement ofdye-sensitized solar cell(DSSC). This paper describes the morphology changes anddefect condition and optical properties under the effect of H~+doping.In this paper, we use ethylene glycol monomethyl ether as a solvent, zinc acetatedihydrate as the starting material and amine as catalyst to prepare the sol by sol-gelmethod. Afterward, the sol was coated by spinning on the ITO-coating glass.Subsequently, we fabricated ZnO nanowire by water bath method through the reactionof zinc nitrate hexahydrate and hexamethylenetetramine on the basis of the seed layer.Doping H~+on the ZnO seed layer and ZnO nanowire arrays though proton irradiation.And then ZnO nanowire arrays were fabricated on the doped sample. The morphology,optical properties and defects have changed when H~+was doped, and the effects of H~+doping in ZnO though proton irradiation have been studied.The results have showed that the optimal process parameters of synthesizing ZnOnanowire arrays were0.1mol/L sol to prepare ZnO seed layer and0.025mol/L solutionto grow ZnO nanowires by water bath.The optical transmittance of ZnO seed layer and ZnO nanowire arrays weredecreased both before and after the H~+doping, and their UV emission peak intensitysegment also have reducing trends.Scan photos and X-ray diffraction results show that the quantity of ZnO, whichwas fabricated after irradiation, was less with the increasing of H~+,According to photoluminescence results, the ultraviolet and visible light-emittingpeak intensity of ZnO nanowire arrays decrease with the increasing of H~+, because ofthe proton quenching effect, while the H~+doping samples grew on ZnO nanowirearrays in turn reduced the quenching effect of H~+adoption.