The Optoelectronic Properties And Application Of Intrinsic And Indium Doped Zinc Oxide Nano-structure

ZnO is one of the third generation semiconductor materials, a new type of II-VI directband gap semiconductor material, and is known as the third generation of optoelectronicsemiconductor material because of its special optical and electrical properties, which areshowing great application prospects and potential in many areas. Therefore, this article aims toresearch ZnO nanostructures preparation and the properties influenced by In doping, ZnO andIn-doped ZnO nanostructures were prepared by spray pyrolysis, sol-gel method, spraypyrolysis/sol-gel-hydrothermal synthesis method; the properties of the samples were tested bymeans of XRD, SEM, PL spectrum detection to discuss the causes of the properties of thesamples prepared by these experimental conditions, suggesting the growth mechanism of ZnOnano-structures prepared by the sol-gel/hydrothermal synthesis method and the influence of Indoping on the properties;ZnO nanowires were prepared by electrodeposition method, the advantages of suchmethod is the direct preparation of ZnO nanowires, low reaction temperature, simpleequipment, conditions are easier to achieve, high deposition rate, and environmentally friendly,and the method is suitable for promotion on the large-scale industrial production;ZnO nano films were prepared on ITO glass substrates by spray pyrolysis, the film wereclosely arranged, the structure is compact and it have a well UV luminescence properties;Wurtzite hexagonal structure of ZnO nano films were prepared by the sol-gel method,with the increase in the number of spin-coating, the samples in the (002) diffraction peakbecomes stronger; more spin-coating of the film introduced an increase of oxygen vacancydefects, resulted an enhanced emission peak in the visible region; due to the multiplespin-coating membrane process introducing repeatedly annealing process, resulted thedecrease of zinc interstitial defects, so that the conductive capacity weakened;ZnO nanostructures prepared by spray pyrolysis-hydrothermal synthesis have a goodwurtzite hexagonal structure; with the increase of the growth of time, the sample growthadvantage from the (002) shift to (100) and the size of the samples became larger, but in thesame time of growth, when the growth solution concentration is0.03mol/L, the ZnOnanostructures had a minimum dimension and with the increase of the growth time, the oxygen vacancy defects and zinc interstitial defects are relatively reduced, resulting a enhanced UVemission peak emission peak, weakened visible region and weakened ability to conductelectricity;The samples prepared by sol-gel-hydrothermal synthesis are wurtzite hexagonal structure,have a growth advantage along the (002) plane from XRD results and the crystal size increasedwith increase of the seed layer thickness; the higher concentration of growth promoted thegrowth of ZnO more obviously, while the top of the rod-like structure corroded by the increaseof the higher concentration solution, resulted its tip smaller in diameter and sharpened; when inthe same concentration of the solution, ZnO nanorods size became larger with the growth of thegrowth time and the conductive ability was determined by the preparation of seed layers;concentration of zinc interstitial defects increase with the increase of Zn2+concentration in thesolution; with the increase of the growth time, free Zn2+ion went into the ZnO structure,produce more zinc interstitial defects, resulted the enhancement of conductive capacity;different growth solution concentration of ZnO nanostructures can be seen from the SEMresults, and ZnO crystal growth mechanism under the experimental conditions is speculatedthat the progress is from a tube-like hexagonal prisms to solid structure of ZnO nanoneedlesand finally to ZnO nanowires;In-doping destructed the growth advantage along the (002) plane of ZnO nanostructures,increases the growth advantage along (001) and (101) plane, indicated that In-doping samplegenerated lattice distortion; In-doping leading the blue shift of the UV emission peak andweakening the emission intensity in the visible region, indicaed that the In-doping resultedlattice distortion which increased of the band gap of the samples, and reduced the oxygenvacancy defects and the deep level in the ZnO nano-sructures, and increased the ZnOconductive capacity.