Preparation Of Doping Type SnO₂Thin Film By Ultrasonic Spray Pyrolysis Method And Material Properties

With the emergence and development of semiconductor industry, SnO2thin film with good photoelectric performance began to attract the attention of people, And gradually formed on the basis of the SnO2thin film of advanced material industry, such as light-emitting devices, large area display electrode, low-e energy saving architectural glass, solar, gas sensor, ion exchanger, etc. In view of the traditional tin oxide thin film can’t juggle optical through the contradiction between the performance and electrical conductivity, based on SnO2thin films as the main research object, good spectrum through performance and electrical performance of tin dioxide thin films were successfully prepared by controlling the doping elements and preparation technology.This topic used the ultrasonic spray pyrolysis method, successful preparation of unitary doping (Sb/SnO2、Ni/SnO2、Zn/SnO2) and binary doping [(Sb:Ni)/SnO2] tin dioxide thin film on the quartz basement. Crystal structure, microstructure and surface morphology of thin films were observed by X-ray Diffraction, Scanning Electron Microscope; Optical through performance was tested by Ultraviolet-Visible Spectrophotometer; And electrical conductivity was measured by four-probe meter. In this paper, we explored doping composition, doping quantity and coating process to the effect of photoelectric property of the thin film, studied under the dual heavy doping mechanism of the high UV transmittance of the films.In the study of unitary doping tin oxide thin films, we probed into the effect of Sb, Ni and Zn unitary doping to the crystal structure, morphology and optical performance of SnO2thin films, focused on the cause of changing in ultraviolet and visible light transmittance in different amount of doping elements, doping amount and deposition conditions after unitary doping. The results prove that:the crystal structure appeared as a small columnar crystal in using the ultrasonic spray pyrolysis method, the high visible light transmittance is88.99%when3%Ni doping; Square resistance of the films were increase with the rising of deposition temperature, also as the doping amount, but were decrease with the extension of deposition time.In the based on the study of unitary doping tin oxide thin films, Sb/Ni binary doping was adopted into the SnO2thin films. We discussed the effect of structure, morphology, transmittance in ultraviolet region and visible region, energy band structure and square resistance of thin films to doping amount of Sb and Ni; Put forward the role of composite effect produced by two different type of semiconductor doping at the same time to the photoelectric property boost; Provided the corresponding theoretical explanation for the phenomenon that dual doped Sno2thin films have a high ultraviolet transmittance. The results show that:after binary doping, crystalline grain size of thin film become smaller, appeared as nanoscale columnar crystal structure, and the arrange is more dense than which in unitary doping. Lattice constant of SnO2thin film increase after binary doping, and turned up obvious texture micostructure, we found that the (200) crystal face grew as the advantage growth face; Under the action of composite doping compensation mechanism, Sno2thin films not only had good ultraviolet transmittance(Among them, there is a high uv transmittance "platform" in shallow UV region(300nm-380nm):UV transmittance is65%while1%Sb-x%Ni doping), but also had good electrical performance.