Calculation Of The Efficiency Of GaN/InGaN Quantum Well Solar Cell

This article calculates the theoretical efficiency of single GaN/InGaN quantum well solar cells and GaN/InGaN quantum well solar cells through various simulation of GaN/InGaN quantum well solar cells from macrocosmic view to microcosmic view by using TiberCAD simulation software.In the solar cells research filed, cleaning, efficiency and low prime cost is still the starting point of solar cells and the standard to measure the photoelectric conversion voice of solar cells. In order to break the limits of theoretical efficiency of traditional solar cells, and to explore the new high efficiency solar cells, we have already made further research about the third generation solar cells. And so far, the quantum well solar cells is one of the best solar cells in the research field.The quantum well solar cells is a kind of new structure solar cells that puts semiconductor quantum well into the intrinsic layer of the solar cells. The main ideas are to achieve the band tailoring of solar cells through regulating the potential well and potential barrier materials in quantum layer of the solar cells, and to expand the absorption spectroscopy of solar cells and to improve the transportation of charge carrier. We can use all these features to improve the photoelectric conversion efficiency of solar cells. Moreover, InGaN is a kind of band gap material, its forbidden gap can be adjusted successively from0.7eVto3.4eV. It has high absorption coefficient, good stability, and strong radioresistance and nearly covers all the wavelengths band of the solar cells. All these series characteristics make InGaN have the potential to make high efficiency solar cells, and make it become one of the best materials to male high efficiency solar cells. And these features make GaN/InGaN quantum well solar cells become one of the hottest research directions of the high efficiency solar cells so far. However, comparing with some mature traditional solar cells, GaN/InGaN quantum well solar cells and the whole quantum well solar cells have several problems on technology, materials growth technology and chip structure. Here we establish the simulation model of single quantum well solar cells and double quantum well solar cell about GaN/InGaN, by using the analogue simulation software of TiberCAD, and combining the analogue simulation examples of Ⅲ-Vsemiconductor device. At the base of it, we analysis the influences of the thickness of each layer, indium content and doping content towards the current luminous characteristic of quantum well.In the end, by combining simulation software of TiberCAD semiconductor and the analysis of counting result, we get that the efficiency of GaN/InGaN quantum well solar cells has improved by comparing with the photoelectric conversion efficiency of InGaN solar cells. And the photoelectric conversion efficiency of GaN/InGaN double quantum well solar cells is34.1, it is higher than that of single quantum well solar cells whose photoelectric conversion efficiency is32.4%.