| InGaN material is the most promising solar cell material, because of its continuously tunable direct band gap, high absorption coefficient, radio resistance, and so on. This thesis investigates the photoelectric conversion characteristic of InGaN solar battery by analytical and numerical methods.First, according to theoretical calculation, when the component of In is 0.82, the InxGa1-xN single junction solar cell has a maximum conversion efficiency of 27.28%; when the component of In is 0.62/0.84, the InxGa1-xN double junction solar cell has a maximum conversion efficiency of 41.75%; when the component of In is 0.92/0.56/0.76, the InxGa1-xN triple junction solar cell has a maximum conversion efficiency of 54.39%; when the component of In is 0.74, the InxGa1-xN/GaP heterojunction solar cell has a maximum conversion efficiency of 30.75%.Then, using AMPS software we simulated the InxGa1-xN solar cells of p-n type and p-i-n type. For the p-n type, when the component of In is 0.7, the solar cell has a maximum conversion efficiency of 26.988%. For the p-i-n type, when the components of three layers are the same and the component of In is 0.3, the InxGa1-xN solar cell has a maximum conversion efficiency of 32.607%. It is also found that when the component of In in the i layer increases, the conversion efficiency will increase slowly.Finally, the influences of the layer thickness and doping concentration on the conversion efficiency are explored respectively. It is found that for the p-n type, regulating the thickness of p-layer and limiting the doping concentration of the p-layer in a range of 1×1014～1×1017 cm-3 can improve the photoelectric conversion efficiency of solar cell; for the p-i-n type, changing the thicknesses p and i layer affects the conversion efficiency of solar cell, but the thickness of n-layer does not.The theoretical calculation and numerical simulation of this paper provides guidelines for preparing the InGaN solar cells with a high photoelectric conversion efficiency. |
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