Electron Beam Lithography Technology And Research Of Application In Film Anode Of Lithium Ion Batteries

Electron beam lithography (EBL) technology is an important high-resolution means ofmicro-nano fabrication. Because of the flexibility of electron beam resist, EBL technology hasbecome a designable and controllable new method to prepare new materials a nd structures.Our work focus on effects of processing parameters in EBL based on SEM, and application inpreparation of thin film anode in lithium ion battery. We have gotten film anode with Al-Sninterphase arranged structure by combining EBL with magnetron sputtering technology forthe first time. And the impact of the new structure on cycle performance has been provedindirectly through an analogical method.Firstly, we choose Si as the substrate, the effects of beam current, resist thickness anddeveloping time have been discussed. The results prove that higher beam current leads togood efficiency of EBL, but serious space charge effect and lower resolution. Under the sameexposing condition, the thicker resist, the larger forward scattering, which results in lowerresolution. However, the electron beam will directly pass into substrate through the resistlayer, if the resist is too thin. And time and temperature are important in development. Undera certain developing temperature, patterns will lose details because of short developing timeand excessive developing time results in low resolution.Secondly, combining EBL with high vacuum sputter coating, Au quantum dot array hasbeen prepared. There are two kinds of PMMA with different molecular weight coating on thesubstrate, the bottom layer is120K PMMA, and the top layer is350K PMMA. Thedouble-layer resist will form―undercut‖structure after exposing, which is helpful for lift-offafter exposure and development, and good to get structures with large depth-to-width ratio aswell. Au quantum dot array in our experiment shows regular and orderly arrangement, and thedot size is about250nm, pitch is1μm.Finally, Al-Sn film with interphase arranged structure has been prepared, which is due tothe combination of magnetron sputtering, chemistry etching and EBL. However verifying thesuperiority of this structure is achieved by means of comparing the performance of Sn-Cufilm anode with different scales active substance. Sn-Cu film has been annealed at different temperature to make different scales active substance arranged alternately. And such structureis similar to the microscopic structure of Al-Sn interphase ordering. Regardless of theinfluence of the intermediate phase compound, Sn-Cu film anode with different scales activesubstance arranged alternately has a more stable cycle performance. Thereby the materialswith interphase arranged structure have better cycle performance.