Research On SIC MOSFET And Its Applications

Silicon carbide (SiC) device, which is going to be the next generation power electronics devices,has draw a lot of attention in recent year because of its outstanding physical property in hightemperature and high working frequency. It has a great value to research the key technology of SiCdevice in driver and characteristics analysis.A PSpice SiC MOSFET model was proposed in this paper, with wide temperature dependentparameters. Considering the temperature control voltage source, current source and negativeturn-off drive voltage, the modeling principle is analysed in detail. The drive circuit for SiCMOSFET is researched and designed depending on different applications. Based on the researchresults, a Buck converter is made to verify the accuracy of the PSpice model at different voltage,current and temperature. The simulation results accord with the test results very well, whichdemonstrates the accuracy of the SiC MOSFET model.The application of SiC MOSFET is researched based on dual active bridge (DAB). The workingprinciple and the operation mode of the converter are analyzed in detail. The difference of parasiticparameters, temperature characteristics and body diode between two devices has a great effect onthe performance of dual active bridge converter. A DAB prototype using SiC MOSFET andimproved control strategy is made to demonstrate the superiority in comparison with conventionalSi MOSFET.