Research On Power Supply Technology For High Frequency Induction Heating Based On SiC MOSFET

Si C MOSFET is a semiconductor device which just entered industrial application and is immaturely adopted. Although Si C MOSFET got widespread attention on its advent, it’s switching features, static characters and power loss in real practical application still needs further validation. It is necessary to use simulation software to make analysis and evaluation about the operating characteristics and efficiency of the power circuit before putting it into practical engineering. To lay a solid foundation for the research about ultra high frequency induction heating key technology, this paper analyses and optimizes the inner circuit structure and key parameters of Si C MOSFET based on the model program provided by manufacturers, establishes precise model of Si C MOSFET in PSpice simulation software. Temperature-controlled voltage source and current source, voltage-controlled switches, resistors and capacitors with precise mathematical functions are introduced in the model to improve key parameters of Si C MOSFET, to simulate real working features more accurately, and build static and dynamic feature experiment platform to verify its correctness and effectiveness. The topological structure of rectifier and inverter, tank selection and power control mode of control technology in ultra-high frequency induction heating power designing are the explicitly analyzed in this paper. To ensure that the Si C MOSFET drive can reliably trigger, high-effective and high-drive powered drive circuit is designed in consideration of choice of drive chips, optimization of drive path, electrical isolation and drive protection. And finally the whole power system control program is given, the design of devices computing and selection is complete, a prototype of induction heating power is built to verify the design.