Yb: Er: Preparation And Optical Properties Of ZnO Thin Film Electroluminescent

As the most promising luminescent material,ZnO semiconductor light-emitting materials,has been successfully used in light-emitting diodes(LED),piezoelectric diode,gassensors,room temperature ultraviolet laser,etc Doping of ZnO can adjust the photoelectricproperties of ZnO,thus the study of rare-earth doped ZnO nanostructures preparation andperformance become extremely attractive.ZnO with stable chemical structure (oxidation, hightemperature resistant, resistant to moisture) is suit as the substrate material to doping in. Rareearth elements have special shell structure, with the4f configuration electronic transitionbetween trivalent rare earth ion have features sharp peak, become a suitable choice ofluminescent materials. So the ZnO thin film materials doped with rare earth ions can not onlyrich the color of the light, and has an extremely important research value in optoelectronicdevices.The main content of this article is:First of all, introduces basic knowledge of ZnO and rare earth, the latest progress andimportant research results about rare earth doped ZnO thin films were reviewed.Second,series samples which prepared by ultrasonic spray pyrolysis is erbium-doped,ytterbium, ytterbium erbium co-doped ZnO thin films and the pure ZnO thin film samples,introduces the preparation process, optimizing the process parameters.Then, using X-ray diffractometer and scanning electric microscope to analysis thecharacterization of crystal structure and surface morphology. Results show that ZnO and rareearth doped ZnO thin films prepared by ultrasonic atomization thermal decomposition mainlygrow along the (002) and (101) directions. After the incorporation of Er3+and Yb3+ions, the(c)axis preferred orientation (002) direction was better; the surface of ZnO thin films is alarge number of nanorods and crystalline structure, The doping of Er3+and Yb3+ions has acertain influence on ZnO crystal lattice.The325nm wavelength excitation was analyzed at the same time. Due to the effect ofsensitization of the Yb3+, increased the377nm band emission intensity, and rare earth ions onlattice change450-550nm range ZnO lattice defect luminescence decreased; Yb, Er dopedconcentration ratio was optimized;514nm wavelength is discussed under the excitationspectrum. Results show that because of Er3+ions in4F3/2-4F13/2level exists between763nmand make ZnO760nm excitation more strongly.Finally, this research was summarized, the future research in this field was prospectedtoo.