Fe ^{3 + Preparation And Properties Of Doped ZnO}

ZnO is a performance with wurtzite structure direct band gap semiconductor material, it is not easily oxidized in the atmosphere, the room temperature band gap of3.37eV, bound exciton60meV, easily excited. Zn with high chemical and thermal stability, in many aspects such as sensors, optoelectronic devices and photocatalytic both great application prospects. Usually there are many ways to synthesize one-dimensional ZnO, for example, chemical vapor deposition (CVD), sol-gel method, solid phase reflect method, magnetron sputtering method, the microemulsion method, hydrothermal method. Hydrothermal method as an environment-friendly reaction has been widely applied to the preparation of inorganic nanomaterials. The transition metal-doped semiconductor metal oxide can effectively improve the semiconductor photoelectric chemical activity, in particular, a transition metal-doped ZnO have got excellent catalytic properties and much attention.(1) This article focuses on the Hydrothermal Synthesis of nano-zinc oxide, reaction temperature, time of crystallization conditions and surfactant nano-zinc oxide structure and morphology characterization by XRD and SEM means of summing up the discussion oxide nanoparticles the growth mechanism of zinc.(2) Hydrothermal synthesis method for preparation of the Fe ions doped zinc oxide nanowires composed of micron spend. Tests show that Fe ions may successfully doped into the zinc oxide lattice.