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The Solution Of SRAM Failure Induced By Contact Process In Semiconductor Manufacturing

Posted on:2014-01-07Degree:MasterType:Thesis
Country:ChinaCandidate:X Z ShenFull Text:PDF
GTID:2268330422454396Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
The topic of this article is to illustrate the solution of the product yield rate with many examples during the production of integrate circuit. With the size of integrate circuit became smaller and smaller, the power consumption of product also became more and more critical, low power consumption, high capability, low cost has been our development trend. Yield is one of the most important problem in manufacture of integrate circuit.Static Random Access Memories (SRAMs) are key components of modern VLSI designs and a major bottleneck to technology scaling as they use the smallest size devices with high sensitivity to manufacturing details. Because of SRAM’s feature, much invalidation always happens in SRAM field. Especially below90纳米. technology node, contact process plays a magnificent roll to affect SRAM yield.The Yield of integrate circuit is also decisive factor if the production can be mass product and go into market. Low yield will not only affect product’s stability and also will increase the cost of manufacture to affect competitive power of the product. So how to improve yield has become an important subject in current manufacture of integrate circuit.
Keywords/Search Tags:SRAM, Yield, Contact Process
PDF Full Text Request
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