| In recent years, more and more millimeter-wave band are used in the wireless communicationsystems, the current wireless access has been unable to meet the growing demands on thetransmission rate. Millimeter-wave technology with its characteristics including short wavelength,high bandwidth, ultra high speed data transfer capability, becomes the development direction of thelarge wireless data communications, general concerned by academia and industry. The continuousdevelopment of microelectronics technology provides the technology foundation for the realizationof small size, high integration and low cost integrated circuit. High electron mobility transistor(HEMT) and heterojunction bipolar transistor (HBT) have been widely used in millimeter waveintegrated circuits. The wireless communication system is inseparable from the transceiverfront-end circuits, low noise amplifier is the first circuit block of the front-end circuits of receiver,its main role is to amplify the received signal while suppressing the noise to improve the overallreceiver sensitivity, its noise, gain, return loss and power consumption and other indicators willdirectly affect the performance of the whole receiver system. Power amplifier is one of the mostimportant modules in transmitter, and its main role is to amplifire the power of RF signal, whichwill have a longer transmission distance, its output power, gain, and efficiency will significantlyimpact the entire transmitter system performance. The main work includes the design of low noiseamplifier and power amplifier.Firstly，this thseis introduces the basic theory of millimeter-wave low noise amplifier,including noise sources，definitions and test measures, the classic two-port network and multi-stagecascade noise noise network, low-noise amplifier performance indicators and focuses on analysisand comparison of several typical structure of the low noise amplifier, based on0.07μm GaAsmHEMT process，a V-band low noise amplifier has been designed, the low noise amplifier uses fourcascaded stages and common source structure, microstrip line is used as matching andinterconnecting, the chip has been tested after taped back and the results showed that: in the53GHz~67GHz frequency range, small signal gain is larger than30dB, input and output reflectioncoefficient are less than-5dB,1dB gain compression point output power at60GHz is4dBm,simulated noise figure is less than3dB, the performance is at the leading level at home and abroad.Secondly, the active and passive component has been tested, test frequency reaches to325GHz,according to the test data of passive structures, verifie the accuracy of electromagnetic fieldsimulation. This thseis also uses the test data for active and passive components modeling and based on the models, designed a D-band low noise amplifier, which uses three common sources cascadestructure, CPW as matching and interconnecting, simulation results show that: in the135~145GHzfrequency range, small signal gain is more than19dB, input reflection coefficient is less than-6dB,output reflection coefficient is less than-6dB, noise figure is less than7.5dB, circuit is absolutelystable in the full-band and has been taped off.Thirdly, this thseis introduces the basic theory of power amplifier, including performanceindicators and loadpull technology, combined with the theory part, a60GHz single stage poweramplifier has been designed based on0.07μm GaAs mHEMT process, the amplifier uses commonsource structure, microstrip line as matching and interconnecting, small signal characteristics of theamplifier have been tested, test results show that: in60GHz, small signal gain is greater than4.4dB, input reflection coefficient is less than-8dB, output reflection coefficient is less than-8dB,the simulated output1dB gain compression point power is12dBm, power added efficiency is27%.Finally, based on InP DHBT technology, two60GHz single stage power amplifier have beendesigned, the first power amplifiers uses common emitter structure, bias voltage is given directlyby RF path to the transistor, CPW as matching and interconnection, simulation results show that:in the60GHz, small signal gain is6.8dB, input reflection coefficient is less than-10dB, outputreflection coefficient is less than-10dB,1dB gain compression simulation output power point is7.3dBm, power added efficiency is10.6%. The second amplifier also uses common emitterstructure and the bias votage is provided the on chip, CPW as matching and interconnecting,simulation results show that: in the60GHz, small-signal gain is5.6dB, input reflection coefficient isless than-11dB, output reflection coefficient is less than-7.5dB,1dB gain compression point outputpower simulation is6.6dBm, power added efficiency is8.9%, the above two amplifiers have beentaped off.This thesis mades a more comprehensive analysis and summary of the millimeter-wave lownoise amplifier and power amplifier design, designed a V-band low noise amplifier, a D-band lownoise amplifier and a60GHz power amplifier based on0.07μm GaAs mHEMT process, designedtwo60GH power amplifiers based on InP DHBT process, provide a realistic reference for our nextgeneration of wireless communications. |
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