The Research Of ZnS Spectrum Conversion Materials And Its Thin Films

ZnS was direct-gap semiconductor materials of the II-VI group dements compound, and the forbidden band width was 3.6~3.8eV. With great pHotoelectric properties, ZnS was generally used in pHotoelectric device, such as luminous diode、ultraviolet detection by the pHotoelectric property. It also can be the window layer of CIGS thin film solar cell by its unique spectral transformation effect and environmentally friendly property. With balance doping(Sm, Mn), the spectral response range and luminous efficiency of ZnS matrix materials can be broaden and regulation respectively, hence it also could studied as fluorescent material.In this paper, ZnS and ZnS:Sm microspHeres were prepared by hydrothermal method using inorganic, sulfur powder and samarium oxide as zinc source sulfur source and dopant respectively. The impact of temperature、doped concentration、response time and medium on the morp Hology, crystal structure and luminescence properties of ZnS:Sm microspHere was discussed. Experimental results shows that high temperature leads to the big diameter microspHere and completely crystal growth; The improving of Sm3+ doped concentration leads to improving of luminescence center and strengthen of luminescent intensity, however when Sm3+ doping amount reach 5%, the light intension decline. While the reaction medium was alcohol, the nanosp Here agglomerated severely, the stimulate and the launch peak blueshifte. Overall consideration, the best reaction condition was: 170℃, 14 h, 5%(doping concentration), water(reaction medium).This article also prepared ZnS fluorescent film on the base by vacuum coating film and the effect of base temperature, annealing and the ion doping on surface topograp Hy, crystal structure, transmittance, forbidden bandwidth, luminescence properties of ZnS film was also systematic researched. Experimental results showed that the ZnS film was “paddy” like and with the increase of the substrate temperature, the forbidden gap increase, and film surface tend to smooth; However, the excess substrate temperature will result in the crack of film; The ZnS film have a H(111) crystal plane referential growth, and with the substrate temperature increase diffraction peak decreased at first and increased later; The diffraction strongest peak appeared at 200℃, and meanwhile the transmittance of thin films was highest; After doping Sm3+, the diffraction maximum of(111) plane declined and transmittance rise, and the emission maximum becomes keenness; With amalgamateing acrylicture went up, the surface roughness of the ZnS film rise and the lamelleted “bulge” appeared, the crystallite size grow up; After annealing, the diffraction maximum of ZnS:Sm film strengthen and shifted to right, the transmittance dropped significantly and the forbidden band width increase.