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Properties And Fabrication Of Low-dimensional Silicon Nanostructures

Posted on:2016-05-24Degree:MasterType:Thesis
Country:ChinaCandidate:M Y HuFull Text:PDF
GTID:2271330473465324Subject:Microelectronics and Solid State Electronics
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Low-dimensional silicon nanomaterials have attracted enough attention due to them have a variety of special properties which make them useful in the area of optoelectronic, and biomedical application. In this paper, we focus on the two low-dimensional silicon nanostructure, one is disordered silicon quantum dots, and the other is ordered silicon nanopillar array.This paper is to study Si-ncs with tunable light emission in blue rang which are fabricated via chemical etching method. TEM images showed that the average diameter of Si quantum dots at 1.7 nm and the particle density is about 7.52×1011 approximately. XRD test shows that product is Si quantum dots. According to the results of a series of measurements, it implies that the tunable light emission in blue rang can be attributed to the quantum confinement effect model.Silicon quantum dots solid film is fabricated via deposition method. PL spectra and XPS spectra showed that Silicon quantum dots solid film retains its original properties, and its tunable light emission in blue rang also can be attributed to the quantum confinement effect model.Si-NPA is fabricated via nanosphere lithography and it was studied as a sensing material to detect humidity. SEM and AFM images showed that the average size of Si-NPA at 120 nm approximately, and it evenly distributed in the silicon substrate. Si-NPA humidity sensor is fabricated which has high sensitivity and has fast response and recovery time.
Keywords/Search Tags:Silicon quantum dots, Photoluminescence, Quantum confinement effect, Ordered silicon nanopillar array, Sensor
PDF Full Text Request
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