| ZnO as the third generation of wide bandgap semiconductor materials have been widely studied.What can make full use of the advantages of nanomaterials is the preparation of different morphology Zn O nanomaterial, Zn O matrix composites, and the performance of the Zn O materials was improved. The main contents were as following:(1)Zn O microstructure was prepared by solvothermal method, and the morphology was altered only by adjusting the proportion of deionized water and ethanol in the solvent. It was found that the luminescence properties were related to the morphology of the Zn O materials, which was because that the morphology difference would lead to the differences on the crystal quality, interface defects, the charge distribution on the surface and the terminated lattice face of the crystal. The luminescence properties were finally determined by these factors together.(2)Without any catalysts-assisted,homobranched Zn Onano/microstructure had been synthesized via a simple low temperature water bath method. Such nano/microstructurewhich consists of shuttle-like nano/microrodbackbone was surrounded by six radial oriented branches. In addition, a detailed discussion regarding the probable growth mechanism is presented in this work.( 3) Through an electrochemical deposition process, urchin-like Zn O/In2O3 nanocomposite structure was prepared. After annealing, the crystallinity of composite materials was improved and ultraviolet emission had enhanced, while the emission peak related to the interface of Zn O/In2O3 nanocomposite structure was observed at 443 nm.(4)Heterogeneous Si/Zn O nanostructure was prepared by a three-step method.The optimal solution was chosen by changing the experiment conditions. And its optical properties were studied. |