The Resistive Switching Effects And Application Research Based On Metal Coordination Terpyridyl Polymers

The resistive switching effects were used in memory field. The metal coordination terpyridyl polymer materials have been considered as promising candidates for the implementation of resistive switching devices due to their low-cost, easy solution processability, mechanical flexibility and ductibility, tunable electronic performance through innovative molecular design cum synthesis strategy and compatibility with complementary metal oxide semiconductor technology as well. We introduce the classifications of the resistive switching effect, structure, performance parameters and materials of the resistive switching device. To the application for the resistive switching effect, we focus on the resistive random access memory and neural networks simulation. In this article, we study the flexible RRAM and stimulating synapse memristor based on the metal coordination terpyridyl polymers.We fabricate a flexible RRAM with terpyridine-europium-iron polymer as functional layer and flexible substrate PDMS as substrate. The experimental results show that the flexible device has stable resistance performance. The device presents multilevel switching performance in RESET. When the strain is small, the device remains multi-level resistive switching behaviors. When the stain increasing, the device will appear two resistive states. The study discovers the mechanism of multi-level resistive switching behaviors, which is due to the incomplete reductive process of Fe ions.We fabricate the memristor Ta/EV（ClO₄）₂+PEO/TPy-Fe/ITO/Glass with terpyridine-iron polymer and viologen as functional layers. The device successfully simulated the functions of the synapse, such as potentiation and depression of the synaptic weight, SRDP, STRP, STM/LTM, as well as the learning-forgetting-relearning behaviors. In this study, with the increase of positive and negative pulse numbers, the plasticity of device increases and decreases, respectively. With the increase of pulse numbers, the plasticity and the relaxation time constant increase.