Study On Preparation And Opto-electrical Properties Of Copper Thin Films

Nanoscale copper film replaces the Al and becomes a kind of interconnect material due to its lower resistivity. There are three methods to produce the copper films, such as chemical vapor deposition, physical vapor deposition, and electroplating. The advantages of physical vapor deposition are to realize high deposition rate on a large scale and to manufacture continuously target material and substrate material without limits. Nowadays, magnetron sputtering, as a way of physical vapor deposition, is widely used due to its simple and convenient operation.In this thesis, the author prepared copper films by magnetron sputtering to study the opto-electronic materials, copper films were prepared on K9 optical glass substrate based on orthogonal test, and the author studied the effects of sputtering time, substrate temperature,and argon flow rate on the structure and nature of copper films. This research showed that the preparation process parameters affect copper films structure. The largest of copper films roughness was optimal when sputtering time was 25 min, the substrate temperature was 300 and the argon flow rate was 6.9, and the least was optimal when sputtering time was 20 min,the substrate temperature was 400 and the argon flow rate was 6.9; the transmission spectrum of copper film has obvious absorption peak at 362 nm wavelength, but the absorption was weak in visible band intensity, instructioned that copper film in visible spectrum had high pervious to light quality; the thicker the film was, the lower its optical transmittance was; the resistivity was increased with the films thickness was increased, and generally showed a trend of gradually reduced; when the copper films thickness was greater than 965 nm, the duration of film thickness increased, the resistivity changed slowly; when the copper films thickness of less than 965 nm, the resistivity value was changed quickly. The resistivity of copper films decreased after annealed treatment, reduced the sharpest when annealed temperature was 300.