The Optical And Electrical Performances Of Nickel Nitride Films Prepared By Magnetron Sputtering Method

Transition metal nitrides have the characteristics of transition metals,covalent compounds,and ionic crystals,and have many excellent properties such as mechanical properties,optical properties,electrical properties,magnetic properties,and catalytic properties in various catalytic reactions,etc.,and have broad application prospects in optoelectronic devices,energy storage devices and environmental protection.With the exploration of the synthesis principle and synthesis conditions of transition metal nitride,it is found that the nickel nitride material has rich electronic structure and excellent catalytic selectivity.It can be used as a potential substitute for various precious metals such as bismuth and platinum.One of the popular materials has important theoretical and practical value for its research on preparation and properties.In this paper,The Ni₃N thin films were prepared on FTO conductive glass by magnetron sputtering method,and the effects of different experimental parameters including substrate temperature,gas pressure,sputtering power,sputtering time and background vacuum on Ni₃N thin films were investigated.X-ray diffraction?XRD?,scanning electron microscopy?SEM?,energy dispersive spectroscopy?EDS?and X-ray photoelectron spectroscopy?XPS?were used to analyze the crystallinity,surface morphology,element composition and bonding state of film samples prepared under different experimental conditions.The results show that the experimental parameters of Ni₃N film with high crystallinity,large crystal particles and dense surface morphology are as follows:the substrate temperature is 150°C,the gas flow ratio of Ar and N₂ is 16:4 sccm,the gas pressure is 1.2 Pa,and the sputtering power is 80 W.The sputtering time is 60 min,and the pressure of the background vacuum is below 10^-4 Pa.The light transmittance,absorbance and resistivity of the sample film under different experimental conditions were tested.The results show that the film has the highest light transmittance and resistivity at 150°C,0.8 Pa and 100 W,and the light transmittance can reach60%,the resistivity can reach 1.095×10^-5?m,and the conductivity of the film is very good;Under different experimental conditions,as the wavelength changes,the change trend of light absorbance is different,and there is a light absorption peak at 350 nm and nearby;The field emission performance test found that the opening electric field of Ni₃N film is 8 V/um,the current density can reach 250 um/cm²,and the field emission performance is good.This paper calculates the optical and electrical performances of nickel nitride materials from a theoretical perspective.The calculation found:At the theoretical Fermi level,the conduction band and the valence band of the material are not separated,and overlap occurs.It is confirmed that the nickel nitride material is a conductor type,which is consistent with the experimental conclusion;The density of states of the Ni₃N material corresponds to the energy band diagram.In the range of 1.1 eV to 25.4 eV,the density of states is small,and the non-locality and elongation of the atoms are strong.In the range of-7.2 eV to 1.1 eV,the density of states sharp increase indicates that the non-locality and elongation of the atom are weak;The light absorption peak of Ni₃N material appeared at 350 nm,which is consistent with the experimental results;and the absorption peaks of Ni₂N material light appeared at 58.79 nm,81.97 nm,110.68nm and 162.56 nm,which provide a theoretical basis for further experimental research of nickel nitride materials.