Preparation And Characterization Of Composite Energetic Bridge Films

The composite energetic bridge films is a new type of nano composite thin film material, it is mainly divided into the alloying reaction thin film and the chemical reaction thin film, which is composed of two different alternately stacked nanometer level thickness monolayer films materials, or different thin film materials insert each other in the form of nano-particles. By applying voltage on the both side of the bridge films, the current through it, and the joule heat is produced. Under the cooperation of heat and electricity, the materials of the composite energetic bridge films react and the composite energetic bridge films releases energy. The device sensitivity can be used as drive components, propeller, igniter and power source that the core is composite energetic bridge films. It has the characteristics of very high energy density providing, extraordinary great energy releasing speed, stable output and security.In this paper, firstly, the Ti, B and PbO monolayer are preparated by magnetron sputtering technology, the deposition rate, resistivity, surface morphology, micro structure and crystal orientation of the monolayer were characterized by the white light interferometer, four point probe, AFM. FE-SEM and XRD, the influences of process parameters are analyzed and the optimum process parameters are determined.According to the results of the characterization, under the process parameters of 225 W of sputtering power,0.8Pa of working pressure and 100sccm of Ar flux rate, it has higher deposition rate of the Ti thin film which is 54.81nm/min, the lowest resistivity of 4.69×10-3Ω·cm, the minimum surface roughness is 3.75nm and the most density microstructure. Therefore it is proper to deposit Ti thin film. As the sputtering power of 120W, the working pressure of 0.3Pa, the Ar flux rate of 50sccm, the microstructure of the B thin film is the most density, the minimum surface roughness of the B thin film is 1.14nm and the film is polycrystalline. So that the appropriate process parameters of B thin film preparation is above. The process parameters are 50W of sputtering power,0.5Pa of working pressure and 40sccm of Ar flux rate. Under the process parameters, the higher deposition rate of the PbO thin film is 25.46nm/min, the minimum resistivity is 27.43 ×10-3Ω·cm, the microstructure is the most density, the minimum roughness is 6.17nm and the chemical composition of the thin film is only a-PbO and P-PbO without Pb3O4. As a result, it is the suitable process parameters of PbO thin film preparation.Secondly, in order to achieve the Ti/B and Ti/PbO composite energetic bridge films which thickness are 4μm and the layer number is 4,8 and 20 layers, the Ti and B thin films or Ti and PbO thin films were deposited alternately on the polyimide substrate which has been preparated with graphical photoresist.Finally, the electric explosion test of the Ti/B and Ti/PbO composite energetic bridge films are finished by the electric explosion test system to achieve the high-speed photography photos of the electric explosion process and the firing duration. It can be seen from the result of the electric explosion test, the detonation velocity of 4 layers composite energetic bridge films is the fastest, but the firing duration is much shorter and the explosion is not violent. The 8 layers composite energetic bridge films has more advantages than the others in firing duration and explosion intensity. The firing continue time of the 8 layers Ti/PbO composite energetic bridge films is 80ms and the explosion of the Ti/B composite energetic bridge films is the most violent.