Study On The Luminescence Properties Of SOI Materials Modified By Silicon Ion Implantation

In 1958, the first commercial integrated circuit, a silicon chip contained only several numbers of transistors was set for sale. So far, the scale of integrated circuit has been in the developing direction of ultra large scale integrated circuit (ULIC) for over fifty years and silicon is still the first choice material of integrated circuit in order to integrate with the existing CMOS process. However, compared to group III-V compound semiconductor material, silicon is the indirect band gap material which has lower photo-luminescence efficiency at room temperature. It is of great importance of how to improve radiative recombination rate of carriers and the photo-luminescence efficiency of silicon based material to the development of microelectronics and optoelectronics. For the structure of nano-scale silicon material, the exist of quantum confine effect can improve the radiative recombination of carriers and decrease their diffusion to nonradiative recombination center at the same time to improve the luminescence efficiency. Ion implantation is a vital technique of silicon optoelectronic devices fabricating process, the corresponding defect center and silicon nano crystal which can make the silicon based material realize light emission in the optical wavelength area from ultra violet to infrared by controlling the injection energy and the injection dose and combining with the subsequent annealing treatment. It can be seen that the treatments of silicon based materials by using ion implantation technology combined with thermal annealing and studying the luminous mechanism of defect centers and nanoclusters will be of great significance for the optoelectronic integration and optical interconnection.This paper studied the fabrication of luminous material of low energy silicon ion self-injection to the silicon on insulator (SOI) and the optical properties of this material. And we desk studied the structure and evolution route of optical defects and nano crystal clusters in silicon based material system which are both induced shaped by annealing treatment. The following are the major contents of this investigation and the corresponding results of the paper:1. Investigation of the properties of the luminescence centers induced by silicon ion self-implantation to the SOI materialsSelf-interstitial atom clusters which luminescence at the optical wavelength of near-infrared are produced by self-injection of silicon ions to SOI and the straight after annealing treatment. We built several different atom models of defect clusters by studies of photo luminescence spectra of different annealing and measuring temperature, to explain origins of luminous centers and explore evolution of defect clusters at different annealing temperature, which has the guiding significance of improving the luminous properties of grown Si film.2. Visible light emitting from the SOI material moadified by the Si+ ion self-implantationCombining the ion implantation with annealing process, we realized the photo luminescence of visible light wavelength by low energy Si ion self-injection to SOI and forming the nano-crystal structures in the top silicon layer. We studied the nano-crystal clusters formed in Si layer during the ion implantation and ed the effect of sizes and structure of nano-crystals during different annealing temperature and time by Raman and PL measurements. We also studied the corresponding surface morphology changes by AFM.