Fabrication Of 4H-SiC Nanoarrays By Anodic Oxidation With Tailored Structure And Their Photoelectric Activities

Silicon carbide(SiC) is a typical third generation of semiconductor material with excellent qualities, for example, wide band gap, high thermal conductivity, high electron saturation drift velocity, high critical breakdown field and excellent stability. It is considered as an ideal material to make high frequency, high temperature, high pressure, radiation resistance and high power electronic devices. SiC low dimension nanostructures not only have intrinsic physical properties of conventional materials, but also have unique nanomaterials properties. SiC low dimension nanostructures have wide applications in novel and efficient conduct materials.The fabrication of SiC nanoarrays is one of devices applications important fundamental. But most fabrication methods need high temperature and high pressure, reduce to the materials fabrication without controllability and repeatability. It was reality mean and development applications to fabricate SiC nanoarrays structures under room temperature and atmospheric pressure.In the work, we reported the fabrication of SiC nanoarrays structures by anodic oxidation under room temperature/pressure. We have implemented thehighly oriented SiC nanoarrays structures with control by anodic oxidation with changing the experiment parameters. Then we test and analysis the field emission properties and photoelectric catalytic. It indicating that the SiC nanoarrays has wide application prospect in field emission cathode material and photoelectrocatalysis. According to the comprehensive work of this thesis, the main results are follows:(1) The synthesized high oriented and qualitied Si C nanostructures arrays by anodic oxidation using the n-style 4H-Si C as raw materials and anodic solution(contains the HF, ethanol, hydrogen peroxide) under room temperature and atmospheric pressure.(2) The synthesized the SiC nanostructures were controlled by controlling the anodic oxidation parameters, such as anodic time.(3) The field emission results indiscates that the obtained SiC nanostructures arrays with low open field and stable electrons emission, which has excellent field performance.(4) The synthesized SiC nanostructures arrays were measured by photoelectrocatalysis device. The results display that the morphologies of SiC nanostructures arrays have an important effect on photoelectrocatalysis performance.