| High power magnetron sputtering has advantage of dense layer, good adhesion and film uniformity, but its low deposition rate becomes an important factor that restricts its development. Against disadvantages of its low deposition rate, many people propose many solutions, including DC combining high power pulse technology and MPP technology, but these kinds of technology in improving high power deposition rate at the same time reduce the ionization rate of the high power.Aimed at the shortcoming of high power magnetron sputtering technology, this paper proposes a new type of double pulse composited high power magnetron sputtering technique. High voltage ignition pulse excites high density plasma, and work low voltage word pulse maintains plasma discharge, at the same time reducing the effect of target attracting ions.By double pulse high power discharge with Cr target in the vacuum chamber, it studies that the influence of different ignition pulse voltage and pulse width, different work pulse voltage and pulse width and different pressure to the target average current and the number of ions bombarding the substrate, and through the spectrum analysis of plasma near the target surface under different parameters, the Ar(0), Ar(1+) and Cr(0) characteristic spectral line change trend. The couple pulse high power magnetron sputtering is used to make CrN films under different ignition pulse width and pulse ignition pulse voltage. Through the analysis of the surface and cross-section morphology, phase structure, hardness, indentation, and friction and wear characteristics under different ignition pulse parameters, it studies the structure and performance of CrN film.Double pulse high power in the vacuum chamber and spectral characteristics show that double pulse high power sputtering has high discharge ionization rate and more Cr atomic than the traditional high power magnetron sputtering. The higher the ignition pulse voltage, pulse width, working pulse voltage, the more number of ion bombardment to the substrate. The wider the work pulse width is, the less number of ion bombardment to the substrate. With ignition pulse voltage, pulse width, the working voltage increasing, Ar(0) spectral intensity is reduced, Ar(1+) and Cr(0) spectral intensity increased. With the increasingof the pulse width, the Ar(0), Ar(1+) and Cr(0) spectral intensity increase. With the increase of air pressure, the Ar(0), Ar(1+) spectral intensity increases, Cr(0) spectral intensity first increases then decreases.Through the study of the CrN film, we find that double pulse high power sputtering technology has a high deposition rate than the tradional, the highest is almost three times. With the increase of short pulse voltage and width, the deposition rate increases first, then decreases, CrN(111) diffraction peak is to the small angle offset and its friction coefficient decreases. |