Preparation And Spectral Analysis Of The Selective Emitter For Thermophotovoltaic Energy Conversion

In theory, the thermophotovoltaic energy conversion system can be highly efficient,clean, silent, and the selective emitter whose performance can directly affect the efficiency and longevity of the TPV system, is an important component of the thermophotovoltaic energy conversion. The point of this paper is to prepare the high performance selective emitter materials, to make the spectral emission of emitter match with the infrared-responding wavelengths of the GaSb photovoltaic cells,and to maximize the efficiency of the system.In this work, we make high performance selective emitter materials by introducing Co/Ni transition-metal dopant ions into the MgO host,and then using the mould pressing craft to make ceramic chips.we use the SEM to observe the microscopic surface morphology,and make Spectral emissive power measurements under different temperature by using infrared spectrum test device. This paper is mainly as follows:(1) In this chapter, we make Co/Ni-doped MgO selective emitter materials by using Co3O4/NiO as dopant particles and MgO as matrix material. In order to obtain homogeneous-dispersed molding compound, we use different dispersants and change the dosage of the dispersants and the binder. We use the mould pressing craft, study the effect of molding pressure on mechanical properties of the sample, determine the optimum sintering system and finally we can obtain high-density and high-strength ceramic samples. The results show that we can obtain high performance ceramic samples by using 2.1wt.% triolein as dispersant and 3.2wt.% PVB as binder; the molding pressure is about 130kN; the sintering temperature is about 1500 ℃.(2)When we introduce concentrations of 2-4 wt.% NiO into MgO host,the distribution of radiant energy is controlled and optimized in the Ni-doped MgO selective emitter. Its spectral emissivity is concentrated at wavelengths where the quantum yield of infrared-responding photovoltaic cells is highly efficient. By the same principle, the selective emitters also emit very little energy at nonconvertible wavelengths. The peak value of the emissivity between 1 and 1.9μm increases with the increase in the doping concentrations of NiO; The emissivity between 1 and 1.9μm increases as the temperature rises.(3)The radiant energy and the emissivity between 1 and 1.9μm increases in the Co-doped MgO selective emitter by introducing a certain concentrations of Co3O4 into MgO host. Near the wavelength of 1.45 μm, the emissivity maximizes. The peak value of the emissivity between 1 and 1.9μm increases with the increase in the doping concentrations of Co3O4.The emissivity between 1 and 1.9pm increases as the temperature rises. Dopant concentrations of about 1-2 mol% are preferred.