Research On Interface Performances Of Si/PEDOT:PSS Hybrid Solar Cells

As an inexhaustible and renewable energy, the development of solar energy has attracted a great deal of attention. Photovoltaics(PV) use solar energy directly into electricity. In recent years, the technology and process of solar cell get a rapid development. At present, silicon materials have predominance in PV market. However, high purity silicon material, 1000°C high-temperature process and complex preparation technology of Si solar cells result in the high cost. This thesis was based on Si/ poly(3, 4-ethylene-dioxythiophene): polystyrenesulfonate(PEDOT: PSS) photovoltaic diode by low temperature, high efficiency and low cost. The device performance influenced by the surface passivation was investigated. My works mainly include the following parts:(1)Si/ PEDOT: PSS hybrid solar cell devices were fabricated through the modification of PEDOT: PSS property, the types of electrode and annealing process. The power conversion efficiency(PCE) reached 8% after it was optimized.(2)According to the optical and electrical properties of different thickness of the PEDOT: PSS layers, we analyzed its effect on the performance of Si/ PEDOT: PSS hybrid solar cells. When the PEDOT: PSS layers was 90 nm, it showed good optical and electrical properties and the devices with it show excellent efficiency of 8%.(3) The SiOx thin layers were formed by native oxidation and H2O2(HNO3)-oxidizing treatment of the Si substrate. We study the properties of the oxide layers and the effect of the SiOx passivation quality on the Si/ PEDOT: PSS hybrid solar cells. The roughness, density, hydrophilicity and the minority carrier lifetimes of Si substrate was measured by AFM, ATR-FTIR, XPS, and contact angle, the minority carrier lifetime. The SiOx layer form by H2O2(HNO3)-oxidizing treatment is uniform, compact, good hydrophilicity and passivation quality, which can effectively reduce the surface defect density and reduce the surface of carrier recombination rate and help form a high quality of the p-n junction. As a result, the H2O2(HNO3)-oxidized dvices displayed higher performance with the PCE of 9.60% and 10.48%.