The Research Of The RF Source For Microwave Plasma Light

Light Emitting Plasma(LEP) is a new light source emerging in twentieth century, The emission spectrum which is a continuous spectrum nearly like the sunlight spectrum makes it one of the main research in light areas in twenty-first. The main task of this article is design a RF source for LEP.The output Frequency of the RF source is sweep from 420 MHz to 470 MHz.The output power is up to 31 dBm. The power flatness is less than ?0.6dB.Using the whole RF source as the input of the last RF amplifier makes the output power ups to 200 W. The RF source is mainly including the RF signal generator and the dual-stage amplifier.Using the PLL chip ADF4350 which is made by ADI to build the RF signal generator. It can export a sweeping frequency signal from 420 MHz to 470 MHz by deploying its internal latches reasonably. We can combine the two-way outputs through Balun stucture which makes the output power ups to 3.5dBm approximately.We adopt the scheme which make the chip MMG3009NT1 cascade to the chip MMG3006NT1,both of the chips are made by Freescale. Based on the small-signal S parameter theory we realized the input and output matching which makes the gain of the dual-stage amplifier ups to 28 dB and the gain flatness is less than ?1dB.we finally meet the requirements of the RF source after making PCB board and debugging. This RF source achieve the basic requirements of LEP system’s RF source. With the LEP’s further study, the demand of RF source which have high stability, high efficiency, high linearity, high-speed frequency switching is apparently increased.