Preparation Of CuInSe₂ Thin Film Solar Cell Materials By One-step Electrochemical Deposition

As the "inexhaustible" renewable energy on the history of human energy, solar energy has been fully aware of its importance for human beings. The key to harvest solar energy include capturing photons, converting light energy into electricity or fuels, and storing energy. At present, humans have actively engaged in the research and development of solar cells.This study has analyzed the current development status and its principle of thin film solar cell materials, and focused on the light absorbing layer and buffer layer, basic structure of the thin film solar cell. The Cu In Se2 thin film light absorbing layer was prepared by one-step electrochemical deposition and selenization annealing. Then the buffer layer was completed by chemical- bath deposition of Zn S. The prepared ITO/C u In Se2/Zn S thin film solar cell was tested and discussed about the impact of various factors to the quality of thin films.The main factors on one-step electrochemical deposition Cu In Se2 thin film is deposition voltage, p H, C u/In ratio, the selenization annealing temperature. The influence of these factors to the quality of thin film was explained by UV- vis、XRD、SEM, Mott-Schottky, and the photoelectrochemical test was further to explained the impact to the parameters of thin film solar cell.And we determined the optimal experiment scheme for preparing the thin film solar cell by the orthogonal experiment: the deposition voltage is-1V, p H is 1.5, C u/In=1:2, selenization annealing temperature is 300℃, and the sulfur source is thioacetamide.We also did the validation test at the optimal scheme. The result shows the parameters of the thin film solar cell is that J= 7.674 m A/cm2, voc=0.502 V, FF=0.69, η=2.67%.