Based On The Parasitic Parameters Of IGBT Gate Drive Technology

The electric car is the most popular vocabulary, and the development of the electric car is also the national important project in the thirteenth five year plan. The motor controller is the body of the new energy vehicles, and the high-power IGBT as the core component of the high-voltage motor controller,it’s development and application are very important.This article embarks from the actual structure of IGBT, the paper introduces the equivalent circuit of IGBT, IGBT switch principle, the basic characteristics of IGBT and the IGBT switching loss mechanism. And on this basis, this paper expounds the inverse mechanism of the IGBT off peak, the existing IGBT gate drive technology at this stage, and analyzes their advantages and disadvantages.This article in view of the IGBT’s own parameters proposes a feedback gate drive technology using IGBT’s parasitic parameters. The technology can be divided into two kinds, capacitance feedback and inductance feedback.Two methods of feedback on the basis of principle and simulation, design hardware circuit for experiment, and set up the experimental platform,investigate the effect of two kinds of feedback, switch loss, how easily to realize. At last, draw a conclusion through analyzing the experimental results of the two kinds of feedback methods. Through the experiment, the feedback of using parasitic parameters of IGBT to control the shut off are proved has a very good effect. Contrast found that the inductance feedback can improve the IGBT switch and can improve the efficiency of IGBT greatly on the basis of the same peak inhibition effect. Finally, in this paper, on the basis of comparative analysis to two kinds of feedback, put forward the deficiency, and put forwardthe improvement opinion to the future development.