Quasi-Z Source Indirect Matrix Converter Based On SiC Power Devices

Matrix converter is one of the power converting devices that achieves compact structure and high power factor. Indirect matrix converter overcomes the flow problems of direct matrix converter. The converter efficiency of Indirect matrix converter is higher and the control is more reasonable than direct matrix converter. The Quasi-Z source indirect matrix converter(qZS-IMC) not only inherits the advantages of the indirect matrix converter, but also realizes the adjustable boost capacity. However, the Quasi-Z source indirect matrix converter based on Si power diviced has many characteristics, such as large size and large switching device power consumption, which reduces the efficiency of system and limits the applications of qZS-IMC.The SiC device has the advantages of high blocking voltage, fast switching speed, low on state resistance, low switching loss and high temperature resistance, which can reduce the power consumption of the device, increase the efficiency of the device, and reduce the volume of the device significantly. SiC device is the preferred solution to solve the qZS-IMC volume and efficiency issues.Firstly, The Quasi-Z source indirect matrix converterbased on SiC power devices is proposed in this thesis, which combines SiC power devices with the Quasi-Z source indirect matrix converter. The volume, efficiency and reliability of the whole system are optimized by using the advantages of SiC materials. The basic principle and modulation method of Quasi-Z source indirect matrix converter are introduced in this thesis.The influence of the modulation on the loss and harmonic wave is analyzed, and which is verified by simulation. Secondly, the design method of the inductor and capacitor is given in this thesis.Secondly,then the Si-IGBT, hybrid SiC-IGBT and SiC-MOSFET are introduced. Through the comparison of inductance capacitance parameters, volume and the loss of switch devices in qZS-IMC based on three different switching device, we can conclude that the capacitance volume of qZS-IMC based on SiC-MOSFET is 50% lower than the other two systems, and the system efficiency of qZS-IMC based on SiC-MOSFET has been improved obviously.Thirdly, the qZS-IMC based on SiC-MOSFET is applied to induction motor drive in this thesis, and the indirect field oriented control is achieved. The simulation result verify the steady state characteristics of the qZS-IMC system.At the same time,the D is optimized based on indirect field oriented control, which is verified by simulation.Finally, theprototype of qZS-IMC based on SiC-MOSFET is designed in detail.