Synthesis Composite Nanoparticles CuIn_0.7Ga_0.3Se₂@Cu₃SbSe₃ And Study Their Thin Film Properties

Because of the large absorbance coefficient, small bandgap and good radiation stability, the I–III–VI2 chalcopyrites are of considerable interest as the photon absorber material in thin-film solar cells.The photoelectric conversion efficiency of CopperIndium-Gallium-Selenium solar cells synthesized by vacuum method is superior than non-vacuum method; but the vacuum equipments are expensive, operated complex, large quantities and high production costs. Therefore, low cost, high efficiency non-vacuum preparation technology of Copper-Indium-Gallium-Selenium solar cell photovoltaics industry is of great significance. Synthesis high quality nanoparticles of Copper-IndiumGallium-Selenium by non-vacuum is the key to improve photoelectric conversion efficiency.This paper is intended to explore in the Copper-Indium-Gallium-Selenium nanoparticles in composite components with low melting point, thus improving heat treatment process for Copper-Indium-Gallium-Selenium material in the film phase mass transfer capability methodology. There have been Copper-Indium-Gallium-Selenium doped with trace antimony in the material elements of the report, confirmed in the synthesis process of Copper-Indium-Gallium-Selenium doped with a small amount of antimony elements, can promote the growth of Copper-Indium-Gallium-Selenium, but has not explained on the mechanism. In this thesis, we have designed and synthesized a Copper-IndiumGallium-Selenium and Copper-Antimony-Selenium compound nanoparticles, through the study of film forming properties of the composite nanoparticles, determine key mobile phase mass transfer mechanism described in order to guide the future advanced nonvacuum preparation technology of Copper-Indium-Gallium-Selenium thin film design and development.Specifically, in this paper CIGS(CuIn_0.7Ga_0.3Se₂, hereinafter referred to as CIGS) nanoparticles, CAS（Cu3Sb Se3, hereinafter referred to as CAS） nanoparticles were synthesized use "hot injection route". CIGS@CAS(CuIn_0.7Ga_0.3Se₂@Cu3Sb Se3, hereinafter referred to as CIGS@CAS) nanoparticles were prepared by mixture the two nano-particles. The structure of these three types of nanoparticles are tested by x ray diffraction（XRD）, results show the preparation of nanometer particle respectively as CIGS, CAS and CIGS@CAS; micro-morphology tested by SEM, results show that particle size were uniform approximately 100 nm. the components of the nanoparticles analysised by EDS, results illustrated that the three components of the Nano-particle design roughly in line with experimental expected. The CIGS nanoparticles and CIGS@CAS nanoparticles were dispersed in a suitable solvent to form ink, CIGS and CIGS@CAS thin films were prepared respectively use ultrasonic spraying device. Then annealing and selenium these two films. and characterized the two films prepared by ultrasonic spray use scanning electron microscopy（SEM） to observe these morphology, the results indicating that antimony doping elements play an important role on the mass transfer mechanism of CIGS.