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Design And Simulation On A Novel MEMS Actuator Of Electrostatic Repulsion With Large Displacement Under Low Driving Voltage

Posted on:2017-02-18Degree:MasterType:Thesis
Country:ChinaCandidate:Y YuFull Text:PDF
GTID:2272330503957514Subject:Electronics and Communications Engineering
Abstract/Summary:PDF Full Text Request
RF MEMS is a specific application of MEMS technology in radio frequency domain, which reflects the combination of MEMS technology and radio frequency technology. Among them, the MEMS RF switch is the most thorough device which is most widely used in RF MEMS; MEMS RF switch has the advantages of small size, light weight, low power consumption, fast response and is easy to IC integration, which makes it widely used in mobile communications, satellite, aerospace, automotive, radar and other fields.However, the reliability of MEMS RF switches seriously hinders the commercialization of RF MEMS switches. To solve this problem, the research scholars at home and abroad put forward a variety of solutions, although these approaches can alleviate the switch reliability problems in a certain extent, but did not solve the problem of reliability of RF MEMS switches.In order to solve the reliability of RF MEMS switches fundamentally, we analyze the failure model of the RF MEMS switches, finding out the internal reason for the reliability of RF MEMS switches is the charge accumulation problem in switch dielectric layer. To eliminate the problem of chargeaccumulation in the dielectric layer, we should start from the driving principle of the switch, and change the high electric field on both sides of the dielectric layer.Therefore, the electrostatic repulsion force being put forward can eliminate the charge accumulation in the switch layer. However, due to its own driving mechanism, that the driving voltage and the driving voltage is too high makes electrostatic repulsion force unable to get a large-scale promotion. Thus, in order to solve the reliability of RF MEMS switches, and further promote the application of RF MEMS switches, we design the electrostatic repulsion micro actuator with large displacement low voltage, based on the basic structure of electrostatic repulsion force, which can not only solve the reliability of RF MEMS switches, and the problem that the driving voltage is too high, but also can meet the practical requirements of the RF MEMS switches.To begin with, build an analytical model for electrostatic repulsion force actuator, Optimize the basic structure of the electrostatic repulsion force through COMSOL Multiphysics, and further introduce the electrostatic attraction driven in a certain range, finally forming a hybrid electrostatic driving structure, and completing the design of micro drive. Eventually, through verifying the simulation software of COMSOL in theory, new design of the micro actuator structure greatly increases the movable plate of the maximum deformation, and effectively reduce the driving voltage, initially achieving the designed purpose of the large displacement, low voltage is designed; In addition, it further makes the application of the MEMS RF switches solve the problem of reliability, andthanks to it, the lower driving voltage also can promote the application of the switches.
Keywords/Search Tags:electrostatic repulsion, MEMS actuator, RF MEMS switch, COMSOL Multiphysics
PDF Full Text Request
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