A Study Of GaAs HBT Single Event Effect

Ga As HBT is one of the import high frequency electronic components in MMIC.It has many advantages such as a low base area resistor,a high oscillation frequency,a high cut-off frequency and so on.In the meantime,it has an good anti-irradiation performance.These advantages make it be good at high speed communication space application. Natural space radiation environment can lead to SEE(Single Event Effects) in Spacecraft electronics semiconductor device,which seriously affects the reliability and life of the spacecraft. Heavy ion single event experiments and simulation is one of the very important means of study on single event effects.It can provide first-hand information on the mechanism of the device for Single Event Effects.The reinforcement of semiconductor devices and circuit on a single event effects has a very important significance on improving the reliability of the spacecraft. Specific results are as follows.The mechanism of Ga As HBT SEE caused by space radiation environment has been described in this paper,as well as physical process of SEE caused by plused laser.The physical process of pulsed laser induced single event effects and heavy-ion-induced single event effects was compared.This paper also discusses the feasibility of simulation to SEE by plused laser,and presents experiment methodl.The method to determine the parameters used in the experiments pulsed laser and pretreatment of chip was given as well.The experiment is conducted to find the influence of different applied voltage(1V,2V,3V and 4V)and energy of laser(30p J,40 p J,50 p J,60 p J and 70 p J) on the amplitude and width of the transient waveform and the amount of the charge collected. The applied voltage play a important role in the amplitude of the wave,a greater applied voltage led to a greater amplitude,and the quantity of collected charge is mainly influenced by the power of plused laser,with the increase of the pulsed laser energy, the quantity of collected charge linearly increases.Register circuit is a key component of central processing unit,D flip-flop circuit is a common form of register circuit.Due to its bistable feedback system, D flip-flop circuit is prone to the occurrence of SEE.On the basis of the experiment,the transient pulse current sources were got,Ga As DFF SEE is simulated in ADS under different transient current conditions which are simulated by Verilog. It is demonstrated by experiments that Ga As HBT SEE is influenced by both applied voltage and plused laser. Besides,Ga As DFF SEE becomes more serious as the power of plused laser becomes greater, Changing the circuit operation results.