| SOI Pi N solid-state plasma reconfigurable antenna has characteristics of compact size,frequency reconfiguration, pattern reconfiguration and compatible with integrated circuit processes. And it is made by Pi N, the intrinsic region of which became solid-state plasma under the forward voltage. Now, the Pi N solid-state plasma reconfigurable antenna has been one of the main developmental goals in reconfigurable antenna. The study key point of the solid-state plasma reconfigurable antenna is how to improve the carrier concentration, for the carrier concentration directly determining the performance of the reconfigurable antenna.The paper focuses on the concentration and distribution of carrier and the effect of the concentration and distribution of carrier on the electrical characteristics of Pi N. The effect of the forward voltage on the carrier concentration of the intrinsic region of Pi N was studied, and the electric parameter models such as the ambipolar diffusion coefficient, current density and profiles of the carrier concentration were established,based on the studied of the structure and working mechanism. The models of BGN,produce- composite and the mobility were established, and the effect of BGN,composite, scattering and temperature on the carrier concentration of the intrinsic region of Pi N were studied. The results show that key factors influencing on the carrier concentration of intrinsic region are BGN, SRH compound and Auger recombination,carrier- carrier scattering and so on. Then the structure and working conditions of Pi N are presented, which the carrier concentration of intrinsic region reach 1×18cm-3.In the paper, Si-Ge-Si hetero structure Pi N was presented, whose band gap width of the P and N region is wider than that of the intrinsic region, and the mobility of the P and N region is higher than that of the intrinsic region. Simulation results show that the intrinsic region length of Si-Ge-Si Pi N can be enhanced by 3 times, and bias voltage reduced 0.6 times. |
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