| Over than half a century, with the drive of Moore’s law, integrated circuit technology has made a great development. Now 45 nm process has become the mainstream of semiconductor production technology. Tungsten has great chemical stability and resistance against electromigration. So tungsten plug is still used for connecting device with metal line in 45 nm technology node. Tungsten pin process must cooperate with Ti/TiN deposition process to use. Scaling down device size makes and the hole depth and aspect ratio (AR) increasing, the traditional tungsten plug technology is facing a huge technical challenge.This thesis bases on 45 nm technology, introduces Ti/TiN film by metal organic chemical vapor deposition (MOCVD) and ionization metal deposition (IMP PVD) technology. Delve into deep sub-micron devices involved in tungsten pin process and its associated Ti/TiN film block technology integration problems.Experiments show that the optimized Ti/TiN deposition process can better with tungsten plug technology integration. Have lower Contact resistance, effectively reduce the resistance capacitance of the device delay (Contact RC delay), greatly improve the semiconductor devices with tungsten salicide bolt Contact stability, and greatly improve the yield of final products. |
