Research And Simulation About Optimization Of High-power Audio Amplifier Geminate Transistors

This thesis’ purpose is to study the design of high-power audio amplifier geminate transistors’ s optimization and simulation, and to put forward a novel structure which may improve the second breakdown current. By improving the emitter current, crowding effect caused by second breakdown problems can increase the scope of the safety work area. The paper is based on the laboratory research cooperated with well-known semiconductor companies. Through the improvement of working techniques and layout structures, the requirement of the product parameters can be achieved.This thesis has a novel structure of high-power audio amplifier geminate transistors’ optimization and simulation. First, design various physical parameters for high-power audio amplifier geminate transistors. We get the doping concentration of each area, diffusion coefficient, mobility, diffusion length and lifetime, and make sure the longitudinal parameters of the device, etc. Then making designs for the longitudinal structure, and completing the simulation through software program. Next step is the simulation of optimization design and layout design on cellular structure and process parameters. In the end, making sure the design devices’ parameters and process, and discussing the way of implementing the key process step.Through testing the design of these high-power audio amplifier geminate transistors, final data is as follows: PNP transistor: BVCBO=-307.17 V, ICBO=-13.24 nA, BVCEO=-287.45 V, ICEO=-25.3nA, BVEBO=-9.13 V, IEBO=-18.84 nA, VCE(sat)=-0.14 V, VBE(sat)=-0.93 V, ICM=10.5A, HFE=86, ISB=3A. NPN transistor: BVCBO=348.2V, ICBO=29.09 nA, BVCEO=285.6V, ICEO=520.5nA, BVEBO=8.26 V, IEBO=29.87 nA, VCE(sat)=0.12 V, VBE(sat)=0.92 V, ICM=10A, HFE=115, ISB=3.5A.The test result shows the design of high-power audio amplifier geminate transistors static parameters meet the design requirements, and has a relative high second breakdown current value.