Preparation And Characterization Of Composite Thin Films Structure Of Diamond/Zinc Oxide

Boron-doped diamond(BDD)has characteristics of low resistivity,strong radiation resistance,stable thermal and chemical properties.As a kind of wide bandgap(5.5eV)semiconductor material can be used as a special substrate material.Zinc oxide(ZnO)has an exciton binding energy of 60 meV,and the bandgap is 3.37 eV at room temperature.It is an excellent direct bandgap semiconductor material.Due to its excellent properties and abundant reserves,ZnO has attracted much attention in the preparation and research of semiconductor devices.Based on the characteristics of BDD and ZnO,the BDD/ZnO heterostructure can be used to expand the application range of semiconductor devices based on wide bandgap semiconductor materials.In this paper,p-type BDD thin films were synthesized by Hot Filament Chemical Vapor Deposition(HFCVD).BDD films were fabricated on unintentionally doped n-type Zinc Oxide(ZnO)films by radio frequency magnetron sputtering(RF-MS).The composite structure was characterized by means of X-ray diffraction(XRD),scanning electron microscopy(SEM)and current-voltage(I-V).The results show that Zn O thin films are successfully prepared on the BDD thin film substrate by studying the influence of the preparation parameters on the growth characteristics of the films.The composite structure is formed.The structure has obvious rectifying characteristics and forms heterojunction structure.The effect of annealing(400oC,700oC)on the properties of the heterojunction was investigated.The results show that the higher annealing temperature could increase the crystal orientation,it also could increase grain size of the Zn O thin films and decrease the opening voltage of the heterojunction.At the same time,the structure can be stable at 200 oC under the electric rectification characteristics,the heterojunction suitable for high temperature environment.