Preparation And Luminescence Of Doped SiO_xC_y Films

With the development of optoelectronic integration,Si-based light-emitting materials have sparked a worldwide interest.Therefore,in the past few decades many researchers have carried out research on Si-based light-emitting materials and devices.The research focused on low-dimensional silicon nanostructure materials such as porous silicon and Si-SiO_x,Si-Si N_x,Si-SiO_xN_y.In fact,these lowdimensional silicon nanostructure materials are in varying degrees of disadvantages in improving the efficiency.In recent years,carbon dioxide has a strong white light emission characteristics caused widespread concern in the world.It's the best way to improve the carrier injection efficiency of the device and reduce the collision ionization effect of the hot electrons,so that the realization of efficient electroluminescent device can be realized.In our works,we prepared doped silicon oxycarbide?SiO_xC_y?films,and analysed the PL?Photoluminescence?mechanism of the system.The main contents in this thesis are as follows.?1?Nitrogen doped SiO_xC_y films were deposited in a plasma enhanced chemical vapor deposition?PECVD?system.The nitrogen doped SiO_xC_y films were deposited by using silane?SiH₄?,methane?CH₄?,oxygen?O₂?and ammonia?NH₃?as source gases in the PECVD reactor.The flow rate of Si H₄,O₂ and CH₄ were fixed,while the flow rate of NH₃ was varied.Based on the PL results,XPS results and FTIR results,efficient emission of white light can be seen.Carbon doped SiOxNy films were deposited in a plasma enhanced chemical vapor deposition?PECVD?system.The Carbon doped SiOxNy films were deposited by using silane?SiH₄?,methane?CH₄?,oxygen?O₂?and ammonia?NH₃?as source gases in the PECVD reactor.Based on the PL and PLE results,it was found that the enhancement of the intensity of the luminescence method was significantly dependent on the increase in carbon content.?2?Europium doped SiO_xC_y films were deposited in a magnetron sputtering system.From analysis of luminescence spectra,the spectra of all the Si C_xO_y:Eu films contain two PL band,the blue band and red band,respectively.With increasing the Eu content,the red PL intensity enhanced,while the blue PL intensity gradually decrease.By varying the condensation of Eu ions in the SiO_xC_y films,the intensity of luminescence can be adjusted.It was found that there is energy transfer for the transition of Eu³⁺ ions between the defect states.