Purification Of Crystalline Silicon Cutting Waste Slurry And Its Application In SiC Ceramic

Traditional recycling process of crystalline silicon cutting waste slurry is complicated, and high purity silicon is difficult to separate with low recovery rate. Preparation of silicon carbide and its composite from purification waste is a simple method avoid the problem of difficulty of silicon separation effectively, also makes full use of the waste and leads to product diversification.Identified the proportion of Si/C is on the basis of test result of components content in waste mortar by physical and chemical methods. Preparation of SiC powder by the method of vacuum carbonized from crystalline silicon cutting waste slurry in photovoltaic industry. Studying the influences of vacuum heat treatment temperature, inorganic carbon source types and carbon removal to the phase composition, microscopic structure and particle size distribution of the powder. Researches show that, with the increase of carbonization temperature in the range of900-1100?, the reaction of Si and activated carbon is gradually completely, and completely reaction at1100?. Continue to raised the temperature, X-ray diffraction peak intensity gradually increased, particle size of SiC powder is grow up. In addition, different carbon source under the same conditions carbonization reaction shows that activated carbon as carbon source better than graphite.Preparation of SiC ceramic material by the method of spark plasma sintering. Studying the influences of milling time, sintering temperature and sintering aid to the density of SiC ceramic, mechanical property. Analysis through the spark plasma sintering process, phase composition and microscopic structure. Researches show that,5hours of milling time is best, but introduction of impurities lead the sample is difficult to sintering. SiC through the process of expansion, reaction, expansion, densifyinig and stabilization in sintering.10w%Al2O3and1800?is the best condition to preparation of SiC ceramic material, relative density of SiC ceramic is95.18%, vickers hardness is21GPa...