| With the rapid development of materials science, transparent conductive thin film has been applied in the fields of semiconductor, solar energy and so on, especially in high-definition flat-panel displays, touch panel, thin film solar cells and other aspects of a huge application. At present, tin doped indium oxide(ITO) thin film is the most widely studied transparent conductive film. Widely application of ITO thin film has been restricted, because the tin oxide has a certain toxicity and metal indium is scarce resources and the price is expensive. Therefore, the development of transparent conductive film with excellent properties has become a hot spot in the current research. The gallium doped zinc oxide(GZO) film is expected to be an alternative to indium oxide doped tin oxide films, because it is not only cheaper and rich in raw materials, but also does not have toxic and has stable chemical properties and has excellent development potential. Therefore, the gallium doped zinc oxide film has become a promising transparent conductive film.Before the preparation of GZO thin film, we need to obtain excellent and compact ceramic target. In this paper, we fabricated GZO conductive ceramics with the gallium doped concentration for 0.075wt%(with potential for scintillation applications) and the size of(37)20mm?(2~3)mm by spark plasma sintering technology, because the traditional high temperature solid state sintering GZO ceramic has the poor density, the poor conductivity, the high sintering temperature and the long sintering cycle and so on. The effect of sintering conditions on the quality and properties of ceramics was analyzed and discussed, and the optimum sintering process was determined. By means of X ray diffraction, density measurement, scanning electron microscope, Hall effect measurements and photoluminescence spectrum, the properties of the ceramics were tested and characterized.The measured results have shown that the density, grain size and conductivity of GZO ceramics are greatly influenced by the sintering temperature and time. In this paper, the optimum sintering conditions of GZO ceramics are the sintering temperature of 1100? and the sintering time of 9 minute and the heating speed of 10?/min; The density of GZO ceramics gradually increases with the increase of sintering temperature, the density of the ceramics almost reached the maximum value at 1100?; With the increase of the sintering time, the density of the ceramics increases and then decreases slightly. The maximum density of the ceramic is 5.59g/cm3, which reaches 99.6% of the theoretical density. So it can be seen that the ceramic has a good quality; The grain size increases with the increase of sintering temperature; The resistivity of the ceramic decreases with the increase of temperature, showing the conductivity of the semiconductor. But the conductive property of the ceramic is decreased when the temperature is too high. The optimal electrical parameters exhibited the highest carrier concentration of 3.316×1019cm-3, the largest Hall mobility of 64cm2/Vs and the lowest resistivity of 2.498×10-3?·cm; Under the condition of hydrogen annealing, the resistivity of ceramic can be reduced and the electrical properties of the ceramics can be improved; The photoluminescence spectra of GZO ceramics with different sintering conditions were tested and the preliminary analysis was carried out; In addition, a preliminary study on the test of the scintillation properties of GZO ceramics had been carried out and the decay time is 0.27 ns. In this study, the high density and excellent electrical properties of the gallium doped zinc oxide ceramics were been fabricated under the condition of lower sintering temperature and shorter sintering time. This research will provide an experimental basis for the further development and application of GZO ceramics. |
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