The Simulation Study Of Thin Film Growth Characteristics In Stacking-Fault On Fcc(Ⅲ) Surface

In this paper, a model of thin film growth in three dimensional is built to simulate the growth of metal thin film on fcc(111) surface which is based on Kinetic Monte Carlo (KMC) method. This model compared the thin film morphologies of triangle, hexagon firming growth and fractal growth which growth on fcc (face-centered cubic) normal site and hep (hexagonal close-packed) stacking fault site, analyzed the effect of substrate temperate, deposition rate and coverage in homogeneous epitaxial growth. The simulation substrate is 900×900 hexagonal lattices with the periodic boundary condition. Processes of atom deposition from high level to low level, diffusion on the substrate, interlayer diffusion, nucleation and islands growth are considered as well as diffusion anisotropy on the substrate and the effect of nearest neighbor particles.The results of simulation indicate that:compared to growth in normal condition, the thin film in stacking fault has more nucleation and lower roughness and the size of the islands are smaller; for the thin film growth in stacking fault, with the increasing of the substrate temperature, the number of island will decrease and the size of island will increase as well as the roughness, with the increasing of the deposition rate, the number of island will increase and the size of island will decrease, the roughness will also descend; during fractal growth, as the increasing of coverage, the roughness will increase and the roughness in normal condition growth increases more quickly than in stacking fault.