The Study Of Optoelectronic Devices Based On Single Indium Sulfide Nanowire

Over the past years, following the development of nanotechnology, one dimensional semiconductor nano materials have attracted extensive attention due to their unique and novel structures, electrical and optoelectronic properties. At the same time, abundant researches have springed up. As an important n-type semiconductor among III-VI group compounds, In2S3 have been widely studied for their optoelectronic performance. In this work, ?-In2S3 nanowires with high crystalline quality have been synthesized, after that, these nanowires were applied to field effect transistors(FET) and photodetectors. The main contents are described as follows:(1) Through a simple chemical vapor deposition method, the In2S3 nanowires were got. The nanowires have a bad gap of 2.28 eV, which suggest that may be sensitive to the light in visible spectrum.(2) Single In2S3 nanowire FETs and photodetectors were fabricated on rigid Si/SiO2 substrate. The FET testing results showed the devices had an n-type behavior. The carrier concentration was 8.975 × 1016 cm-3 and carrier mobility was 2.35 × 10-2 cm2V-1s-1. The photoelectric response measurement on a certain condition exhibited a responsivity of 6.8 × 105 A/W, an external quantum efficiency of 2.01 × 108 % and a specific detectivity of 1.62 × 1014 Jones.(3) Single In2S3 nanowire photodetectors were fabricated on flexible PET substrate. Under the same test condition with the rigid substrate devices, the flexible devices exhibited a responsivity of 7.35 × 104 A/W, an external quantum efficiency of 2.28 × 107 % and a specific detectivity of 2.4 × 1014 Jones. Besides, the Ion/Ioff ratio was as high as 106 and the response time were both less than 10 ms. Under the bending test and after bending test, the flexible devices maintained nearly the same performance as before, even being exposed in the atmospheric environment for one month. With these favourable merits, In2S3 nanowires are believed having a promising future in the application of high performance and flexible integrated optoelectronic devices.