Modeling And Analysis Of Carbon Nanotube Field-Effect Transistor And Its Circuit Applications

As the manufature technics of integrate-circuit scaling to 45 nm,the electronic devices based on bulk-silicon will meet the physical limitations soon.With superior electrical properties, carbon nanotubes(CNTs) becomes one of the most promising alternative candidate of bulk-silicon in variety of new nano-meterials to found the next generation integrate-circuit. Research and analysis on the principle of carbon nanotube field-effect transistors(CNFETs) and its circuits,as well as their performance,is one of the most popular hot-focus in the world.In this thesis,models based on nano-electronical theory are preposed to analyze the carbon nanotube field-effect transistors,as well as the performance of the device and its circuits.On the basis of carbon nanotube electronical features,two models are established for the top-gate MOSFET-like CNFET and cylindrical wrap-around gate Schottky-Barrier CNFET respectively, in order to reveal their DC characters.The gate capacitance is also discussed in the former model. Then,a simulation with the MOSFET-like CNFET model is done,and the result shows that the model qualitatively agrees with some experimental results,and it can be a guidance for qualitative analysis for CNFETs based circuits.Another work of this thesis is analyzing the performance of CNFETs device and its circuits.A ring Oscillater is introduced to show how the parasitical capacitance and resistance affect the circuit performance.Finally,this thesis points out the future work how to enhance and detail the models.