The Melting Recrystallization Behavior Of Low-melting-point Metal Nanowires Under The Control Of The Electric Field

With the rapid development of nanotechnology,the nanoelectronic components are applied in wide fields because of their high integration and huge storage.As the connection of nanoelectronic component's functional elements,metal nanowires are melted since hightemperature environment during the using process.It has become the focus of attention that the changes of morphology and structure for the metal nanowires are effectively controlled in the recrystallization process,thereby extending the life of nanoelectronic devices.This thesis is premised on the characteristics of AAO templete's confinement,explores electric field's function to low-melting-point metal nanowires in the process of melting and recrystallization,and provides theory basis to low-melting-point metal' nanowires application in nanoelectronic components.The main works are as follows:Firstly,the uniform size and highly ordered porous AAO template is fabricated by secondary anodic oxidation.Low-melting-point(Bi,Pb and In)metal nanowires' array that has one-dimensional nano-structure is made by electrochemical deposition in AAO template's pores.Then,the difference of low-melting-point metal nanowires alley's appearance and structure before and after the experiment is characterized and analyzed by corresponding characterization methods.Secondly,this thesis explores the appearance and structure's change of low-melting-point(Bi,Pb and In)metal nanowires in the process of high temperature melting,cooling and recrystallization under the condition of different voltage.Metal nanowires is melted and recrystallized long hours under loading electric field condition.Results of the characterization indicate that with the increase of direct current voltage,all of Bi,Pb and In nanowires would become short,then tiny particle;Meanwhile,the angle between the(110)crystal plane of Bi nanowires and their growth direction gradually increases from the original 60° to 90°.The angle between(200)crystal plane of Pb nanowires or(002)crystal plane In nanowires and their growth direction gradually decreases from the original 60° to smaller angle,until they run parallel to each other.Finally,the reason of morphology and structure's change for low-melting-point metal nanowires is analyzed.With the increase of voltage,the electric field force that nanowires is received is also increased gradually.Under the effect of electric field,the crystal plane begins to move directionally.The nanowires always break along the close-packed plane of atoms,ultimately become tiny metal nanoparticle.This indicates that the electric field plays an important role in the process melting and recrystallization of low-melting-point metal nanowires.