Preparation Of Transistor Memories Based On Electrospun Nanofibers And Their Properties

Electrospun nanofibers exhibit unique flexibility and optoelectronic properties, and have been widely used in organic field effect transistors, organic storage, organic luminescence, organic solar cells, organic sensor, etc. In this thesis, PS, PVDF and PVK are employed as raw materials to prepare electrospun nanofibers. Next, four kinds of porphyrin derivatives of DA-H2P, TPP, THPP and TPyP are doped into PS nanofibers to apply to the transistor memory, and the device performance has been improved effectively. The contents are as follows.1. Electrospinning parameters of PS nanofibers are explored. Then, DA-H2P, TPP, THPP and TPyP are doped into nanofibers as storage elements. The results exhibit that PS nanofibers can be used in the transistor and the memory device doped with DA-H2P molecules shows the best performance.2. Transistor memories based on PS/DA-H2P electrospun nanofibers are further studied. The aligned nanofibers are prepared by the improved collector, then annealed to improve the integration with device. The performance of the device is the best when the content of DA-H2P is 1 wt%. Besides, the chargeable dielectrics with the morphology of nanofibers have more storage sites and higher carrier transport efficiency than spincoated films.3. The electrospinning parameters of PVDF and PVK are explored. Ultrafine nanofibers with an average diameter less than 50 nm have been prepared successfully. The process of preparing ultrafine electrospun nanofibers is most influenced by the concentration of solution. After annealing PVDF ultrafine nanofibers, original fibers disappear and separated and parellel secondary microstructures emerge along the axis of original fibers.