Synthesis And Properties Of Gallium Oxide Based Nanomaterials

Ga2O3 materials are considered as one of the most promising TCOs with wide band gap energy. They are widely used in many fields such as photoelectric diode, thin film electroluminescent and ultraviolet detector owing to their excellent optoelectrical properties. In recent years, one- and two-dimensional Ga2O3 nanomaterials have attracted huge research. However, a few reports on the preparation of Ga2O3 nanocrystals have appeared only recently in literature. So there are still a lot of problems such as low crystallinity and poor dispersibility. For these problems, different experimental conditions were discussed to optimize the quality of obtained Ga2O3 nanocrystals. GaN nanocrystals can be prepared through nitriding Ga2O3 nanocrystals. Furthermore, we can get In- and Zn-doped Ga2O3 nanomaterials by introducing In and Zn sources. Finally, we investigated the morphology,structure,component and optoelectrical properties of above materials, aiming to obtain applicable Ga2O3 based nanomaterials. Detailed as below:(1)We synthesized Ga2O3 nanocrystals by one pot liquid phase method. Different experimental parameters were discussed to optimize the quality of as-obtained production. The average size of Ga2O3 nanocrystals can be tuned(3 nm, 5 nm, 7 nm) using a dynamic reaction temperature. PL spectra suggest that the emmission peaks of productions were 375 nm、420 nm and 440 nm with the increase of size.(2)GaN nanocrystals were prepared by a combined solution and vapor phase method under silica confinement. We can improve the quality of obtained nanocrystals when the nitriding temperature reached 800℃. The results of PL spectra indicated the emission peaks of GaN nanocrystals were red shifted(380 nm-405 nm) with the increase of nitriding temperature.(3)In- and Zn-doped Ga2O3 nanomaterials were obtained by mixing In and Zn organic sources with Ga precursor separately. GIO nanocrystals with monodispersity and uniform shape can be prepared when the concentration of In was less than 50%. The results of PL spectra indicated that the emission peaks of GIO nanocrystals were red shifted(375nm-425nm) with the increase of In concentration. The study of Zn-doped Ga2O3 nanomaterials were mainly focused on electrochemical properties. The results indicated that the first discharge capacity of Zn-doped Ga2O3 nanomaterials was 1356 mAh/g and the reversible capacity was 530 mAh/g. Coulomb efficiency was 40.0%. The as-prepared Zn-doped Ga2O3 nanomaterials could present the reversible capacity retention of 238 mAh/g after 20 cycles and the coulomb efficiency was as high as 96.8%.