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Study On Scale Effect Modeling Of Piezoresistive Coefficient Of Silicon Nanowires

Posted on:2018-05-08Degree:MasterType:Thesis
Country:ChinaCandidate:H ChengFull Text:PDF
GTID:2311330518950899Subject:Instrumentation engineering
Abstract/Summary:PDF Full Text Request
The inertial device developed by MEMS to NEMS,change the sensitive structure size from micron to nanometer level,the sensitivity of the piezoresistive effect close to the detection limit,to further improve the sensitivity has been very difficult,but the varistor size to the nanometer scale,the tensile resistance can be changed,in silicon nanowires and other materials observed.The piezoresistive effect is reflected in the piezoresistive coefficient,and the piezoresistive coefficient of the silicon nanowire is two orders of magnitude higher than that of the conventional silicon piezoresistive coefficient.Factors affecting the piezoresistive coefficient of the doping concentration and the geometry size of this on silicon nanowires piezoresistive coefficient based on scale effect research of different doping concentrations,different scales of silicon nanowires were simulated,and the establishment of the piezoresistive coefficient scale model,the results showed that the silicon nanowire piezoresistive coefficient decreases with the increase of the doping level;silicon nanowire piezoresistive coefficient increases slowly with the increase of the length of the silicon nanowires;piezoresistive coefficient with width(increase or cross-sectional area)and decreased sharply.This paper reported the preparation of silicon nanowires size were simulated and compared with the analysis and test results,to a certain extent,to verify the correctness of the model;simulation with the actual preparation of silicon nanowire size,and compared with the experimental group the results,we found that there are some errors in this model,there is the necessity for further research.Through the study of scale modeling in this paper,to provide theoretical support after the actual processing,will be helpful for all kinds of nano silicon nanowire force sensor,solve the problem of high sensitive continuous miniaturization in the process,to further improve the basic research for application of force sensor has important significance.
Keywords/Search Tags:silicon nanowires, piezoresistive coefficient, scale effect, simulation modeling
PDF Full Text Request
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