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Study On The Photoconductivity And Resistance Storage Performance Of Pure And Sm-doped SnO2 One-dimensional Nanomaterials

Posted on:2018-03-14Degree:MasterType:Thesis
Country:ChinaCandidate:H P ShiFull Text:PDF
GTID:2321330518469657Subject:Materials Science and Engineering
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Ultraviolet photodetectors have become the reaearch hotspot of the photodetectors due to its advantages such as small dimension,low energy consumption and high sensitivity.As a kind of typical multifunctional oxide semiconductor,SnO2 has excellent gas sensitivity and optical properties,it has been widely applied to gas sensors,solar cells,etc.But its micro-nanostructure of the photoconductive and other micro-mechanism is still not clear.Here,we aim to explore high selectivity and sensitivity for UV photodetectors and resistive random access memory based on SnO2 nanomaterials.The microscopic mechanism was revealed by the systematic experimental analysis,and some properties were modified by rare earth samarium doping.The main conclusions and innovations are as follows:?1?In this thesis,SnO2 and SnO2:Sm nanowires were synthesized by high-temperature carbon thermal reduction method and in situ chemical vapor reaction method,respectively.The individual SnO2 nanowires were prepared as FET devices.The SnO2 nanowires were n-type semiconductors with an electron mobility of about 220 cm2V-1s-1.?2?The synthesized nanowires were prepared as two-terminal devices.the photoconductivity test shows that SnO2 nanowires exhibit a strong UV photoconductive response.In addition,the device has a good optical response to visible light at zero bias,indicating that SnO2 nanowires can be used as self-energizing photodetectors.The photoconductivity of SnO2:Sm nanowires is inferior to that of pure SnO2 nanowires,and has obvious sustained photoconductivity.?3?The resistance storage performance test shows that the SnO2:Sm nanowires have excellent resistance switching effect and the storage performance of the devices is very stable,indicating that SnO2:Sm nanowires can be used as resistive memory devices.?4?The piezoresistive performance test of static and dynamic strain shows that SnO2: Sm nanowires have obvious piezoresistive effect.the resistivity of the device decreased under the compression strain,while significantly increased under the tensile strain.SnO2 nanowires did not show a significant piezoresistive effect.?5?Gas sensing performance studies show that both pure and Sm-doped SnO2 nanowires have good responsiveness to ethanol at room temperature.The resistivity of SnO2 nanowires is decreasing,while the resistivity of SnO2:Sm nanowires is increasing in ethanol.
Keywords/Search Tags:SnO2 nanowires, photodetectors, resistive switching effect, piezoresistive effect, gas sensitivity
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