The Study Of Optical And Electrical Properties Of Photodetectors Based On One Dimensional Nanomaterial

The researches of nanomaterials and nanotechnology are two hot fields in nanoresearch.In this paper, the performance of one dimensional nanomaterials and a new technology of synthesis of nanotubes are studied respectively.N-doped InP nanowires are synthesized by chemical vapor deposition and fabricated into field effect transistors(FETs) and photodetectors on rigid silicon, mica slice and polyethylene terephthalate(PET) film. Single N-doped InP nanowire FET on silicon wafer shows excellent electrical transport property and n-type semiconductor behavior with a high on-off ratio of 822 and a high carrier mobility of 43.6 cm2 v-1 s-1, which is much higher than the data reported by other papers. Single N-doped InP nanowire photodetector on silicon wafer exhibits a fast response time and a high white light responsibility of 0.19×104 A/W at the bias voltage of 1.0 V. The devices are also fabricated on flexible transparent mica slice, a novel flexible substrate and PET film, which possess perfect ductility, folding endurance and preserve high performance. Furthermore, hybrid organic-inorganic P3HT: N-doped InP nanowire heterojunction photodetectors are also fabricated, showing much improved photocurrent compared with the pristine N-doped InP nanowire photodetectors based on different substrates. These N-doped InP nanowire devices exhibit the low power consumption, high performance and flexibility of nano-devices, which are promising for future applications.Cd3As2 is an important kind of II-V group semiconductor with excellent electrical and optoelectronic properties, as inner columnar stent to form nanotubes of four important and widely used kinds of semiconductors by a simple CVD method. CdS, CdSe, InP and InAs hollow nanostructures are finally synthesized by only one way with almost the same technology. This new nanotechnology developed by us could reduce the cost with using less material and special nanostructure could be synthesized by this technology, while traditional technology could not. Meanwhile, CdS nanotube photodetectors based on silicon wafer and PET substrate are also fabricated to research the performance of this nanotubes made by our method. The facts show that nanotubes synthesized by us could own excellent optical-electrical property and this technology is worthy of spreading.