Study Of Process And Properties Of TiN Coatings Deposited By Ions Beam Assisted Deposition

TiN is a kind of transition metal compound with excellent properties and wide applications.The preparation methods include chemical vapor deposition,arc ion plating,magnetron sputtering and ion beam assisted deposition.The properties of TiN thin films can be improved by changing the chemical ratio of Ti/N,the bombarding energy and the deposition temperature.TiN often requires long service at high temperatures.However,there are relatively few reports on the longterm service of TiN at elevated temperaturesThis paper aims to explore the influence of the ions beam assisted deposition parameters on the structure,properties and high temperature stability of titanium nitride films.Deposition parameters including nitrogen partial pressure,different substrate temperature and ions energy film were the studied.The results show that:With the increase of partial pressure of nitrogen,the content of N in the films increased significantly.The rise of partial pressure of nitrogen caused the preferred orientation of the films changing from(200)to(220).When the film exhibits a significant(200)preferred orientation,the resistivity of the film is small.Short time annealing makes the films' preferred orientation continue to grow,the resistivity of the film decreases.When the annealing time is prolonged,some of the films generated thermal cracking,and the films failed.Particle of titanium nitride films deposited at room temperature had poor migration ability due to lower temperature.Therefore,the films exhibited free growth state before annealing.With the increase of deposition temperature,the(220)and(200)orientation of films began to take advantage gradually.At 300 degrees of deposition,the textured coefficient of the film(220)orientation was the largest,and the resistivity of the film was lowest.Annealing for 1 hours,the resistivity of the film declined,but after annealing 10 hours and 20 hours,the resistivity of the film changed slightly.When the ion bombardment energy of the film was too high,the preferred orientation of the film was broken,and the textured coefficients of each film orientation were approximately the same.After annealing,the films changed toward low energy orientation.Ion bombardment may cause the film to become denser and hence resistivity decreases.The resistivity of the films prepared under different ion bombardment energy had no obvious change with the prolonging of annealing time after 10 hours annealing.The minimum resistivity of the titanium nitride film is about 36.5 ??·cm.The film failed to fail for 20 hours for 800 hours in the vacuum environment.