Preparation And Properties Of Transparent Conducting Films Based On AZO/metal/AZO

With the development of science and technology,intelligent equipment unceasing renewal,people on the transparent conductive film(TCO)performance of the original high transparent conductive film layer structure(ITO,AZO)with conductive performance cannot meet the production needs of the low.Study of TCO composite membrane is mostly in the adjustment,the sputtering parameters for the intermediate function layer and dielectric layer material on both sides of the collocation and dielectric layer material doped ratio adjustment,deposition conditions change etc..In recent years,there has been no breakthrough in the study of TCO composite films,and the photoelectric properties of TCO films have not been improved much.Therefore,adding Zr-Cu,Al-Ag seed layer in TCO composite membrane,TCO composite membrane metal thin film,so as to enhance the photoelectric properties,this method provides a new way to improve the performance of TCO composite membrane,has gradually become a hotspot in the field.In this paper,AZO/Cu/AZO,AZO/Zr-Cu/Cu/AZO,AZO/Ag/AZO,AZO/Zr-Cu/Ag/AZO and AZO/Al-Ag/Ag/AZO transparent conductive composite films were prepared on glass substrates by magnetron sputtering.The resistivity,visible light transmittance,surface roughness and morphology of the samples were measured by four probe resistivity meter,visible spectrophotometer,atomic force microscope and scanning electron microscope(SEM).At the same time,the influence of the thickness of the film,the sputtering current,the sample location and thesputtering target position on the photoelectric properties of the transparent conductive composite film were investigated.In this paper,the Zr-Cu amorphous alloy layer was used as the seed layer,and a layer of Zr-Cu amorphous alloy seed layer was sputtered on the AZO film,and then the Cu film and AZO film were sputtered on the AZO/Zr-Cu/Cu/AZO film.The experimental results show that the Zr-Cu amorphous alloy seed layer is beneficial to the photoelectric properties of AZO/Cu/AZO transparent conductive composite film to improve the photoelectric properties,the best test group AZO(200s)/Zr-Cu(1s)/Cu(29s)/AZO(200s),550 nm transmittance reaches 74.55%,the square resistance reached 17.38 /sq.The analysis thinks,because the Zr-Cu amorphous alloy layer can form amorphous structure,and the growth in the two-dimensional plane,even if the thickness of thin can also exhibit good spreadability and form a continuous film on AZO substrate,the Cu film grown on Zr-Cu amorphous alloy layer is thin and continuous and smooth,thus the continuous Cu film and the conductive thin thickness and improve the light transmittance.In this paper,the Zr-Cu amorphous alloy layer was used as the seed layer,and a layer of Zr-Cu amorphous alloy seed layer was sputtered on the AZO film,and then the Ag film and AZO film were sputtered on the AZO/Zr-Cu/Ag/AZO film.For the sake of comparison,AZO/Ag/AZO composite films were prepared by sputtering.The experimental results show that the AZO/Zr-Cu/Ag/AZO composite film does not improve the photoelectric performance.On the contrary,the photoelectric performance of AZO/Ag/AZO composite film is decreased.Through the comparison of the Zr-Cu film,AZO film and Ag film thickness and specimen position influence on the photoelectric performance of the AZO/Zr-Cu/Ag/AZO,get the best photoelectric performance test group AZO(110s)/Ag(29s)/AZO(110s),550 nm transmittance reaches 81.37%,the square resistance reached 4.75 /sq.Analysts believe that the cause of the photoelectric properties of AZO/Zr-Cu/Ag/AZO composite membrane decreased may be:(1)although the Zr-Cu alloy is very easy to form amorphous structure,does not need to grow,nuclear island,network,film forms likeCu film,even if the thickness of thin can also exhibit good spreadability and the formation of a continuous film at the bottom of AZO,but Cu and Zr relative to Ag are absorbing metal elements more light,compared to the AZO/Ag/AZO light without seed layer decreased,Cu and Zr and the resistivity at room temperature was higher than Ag,conductivity compared with Ag had lower.In addition,the Al-Ag was used as the seed layer,the first layer of Al-Ag was sputtered on the AZO film,and then the Ag films and AZO films were sputtered on the AZO/Al-Ag/Ag/AZO film.The experimental results show that the AZO/Al-Ag/Ag/AZO composite film does not improve the photoelectric performance,and the photoelectric properties of the AZO/Ag/AZO composite film is decreased.Analysts believe that although the Al and Ag co sputtering can form thin and smooth Ag film,a minimum thickness of a continuous Ag film can decrease the value,but the Al relative to the Ag belongs to the larger light absorption of metal elements(extinction coefficient Ag at 550 nm is about 3.25 Al in the extinction coefficient of550 nm is about 6.55).Compared to the AZO/Ag/AZO light without seed layer decreased,and the room temperature resistivity of Al is higher than Ag,compared to the conductivity of Ag decreased.That is to say,the Al-Ag seed layer in the minimum thickness of Ag continuous film also hindered its lower light transmittance,adverse effects of the current weak beneficial effect to the latter,Al-Ag will not show effectively.