| Transparent conductive oxide films have high transmittance in the visible range and good electrical conductivity, which are widely used in the fields of sensors, flat panel displays, solar cells and so on. At present, indium tin oxide (ITO) films and zinc oxide (ZnO) films get more attention due to their excellent properties. For instance, the ITO films have high transmittance, low resistivity and high work function; the deposition temperature of ZnO films are relatively low and they have better stability under a hydrogen atmosphere, ZnO films also have cheap price. However, it is difficult for the conventional transparent conductive films to realize ultraviolet transmission of less than 350 nm wavelength due to their band gap width limitations. At the same time, the larger the band gap of the material, the greater the difficulty to make it conductive through doping, so single layer deep-ultraviolet (DUV) transparent conductive film having excellent electrical properties is difficult to prepare. Therefore, we still need to develop new DUV transparent conductive film. In recent years, the "sandwich-type" multilayer structure gained widespread attention, which is composed of metal material and wide band gap semiconductor material, it has become the new hotspot in the UV transparent conductive thin film research field.This paper comprehensively discussed the research progress and application prospects of the transparent conductive film, prepared Ag films, gallium arsenic oxide films and multilayer structure UV transparent conductive film formed of both Ag film and gallium arsenic oxide films by using magnetron sputtering. By adjusting the thickness of Ag film and gallium arsenic oxide film, as well as Ag film annealing treatment, using X-ray diffraction, metallographic microscope, ultraviolet-visible spectrophotometer, Hall tester analyze the properties of Ag film, gallium arsenic oxide film as well as multilayer structure. The main work is:1. Preparation and optimization of Ag films. By using RF magnetron sputtering technique, Ag films of different thicknesses were prepared, and then the influence of the thickness on the Ag film structure morphology and optical properties were studied to determine the optimal thickness parameters. In addition, made the Ag film anneal, changes of properties of Ag film were analyzed.2. Preparation and optimization of gallium arsenic oxide films. By using RF magnetron sputtering technique, gallium arsenic oxide films of different thicknesses were prepared on c-plane sapphire substrates, the influence of the thickness on the photoelectrical properties of the thin films were studied to determine the optimal thickness parameters.3. Preparation and characterization of multilayer structure ultraviolet transparent conductive film. Combined with the results of previous studies, we prepared gallium arsenic oxide-Ag-gallium arsenic oxide multilayer structure by using the optimized parameters, the optical and electrical properties of the multilayer film and the effects of Ag layer annealling were analyzed.The results showed that, the Ag films had (111) orientation, when the thickness of single Ag film was 12nm, the film had both good optical transmissibility and conductivity. The grain of Ag film became a little larger and the photoelectric properties of Ag film increased slightly after annealing. All single layer gallium arsenic oxide films prepared in this experiment showed high resistance characteristic. When the thickness of single layer gallium arsenic oxide film was 32.5nm, it had good transmittance in the visible and ultraviolet region. The average transmittance of multilayer structure based on optimal parameters in the wavelength range of 310 to 350 nm was above 50%, the resistivity was 2.79 ohm/sq, the multilayer structure film had good ultraviolet transparent conductive properties. |
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